MT46V128M4TG-5B:D TR

The MT46V128M4TG-5B:D TR is a 512 Mbit DDR SDRAM organized as 128M × 4 with a parallel memory interface in a 66‑pin TSSOP package. It implements an internal, pipelined double-data-rate architecture to deliver two data transfers per clock cycle and supports a clock rate up to 200 MHz.

This device is intended for systems requiring a compact, 2.5 V DDR memory element with programmable burst lengths, four internal banks for concurrent operation, and commercial temperature operation (0°C to +70°C).

Key Features

• DDR architecture Internal pipelined double-data-rate operation provides two data accesses per clock cycle for higher effective bandwidth.
• Memory organization and capacity 512 Mbit capacity organized as 128M × 4 with four internal banks (32 Meg × 4 × 4 banks).
• Timing and performance Speed grade -5B supports a 200 MHz clock frequency (DDR400 timing) with an access time of 700 ps and a 15 ns write cycle time (word page).
• Data and clock interfaces Differential clock inputs (CK/CK#) and bidirectional data strobe (DQS) for source‑synchronous data capture; DLL aligns DQ/DQS with CK.
• Programmable burst and refresh Programmable burst lengths of 2, 4, or 8; auto refresh with 8192 refresh cycles (64 ms for commercial devices).
• I/O and signaling 2.5 V I/O (SSTL_2 compatible) and data mask (DM) support for masked writes.
• Package and thermal 66‑pin TSSOP (0.400", 10.16 mm width) package with commercial ambient operating range of 0°C to +70°C.
• System options and reliability Features concurrent auto precharge and tRAS lockout support to aid memory transaction control and reliability.

Typical Applications

• Embedded memory subsystems — Provides 512 Mbit DDR SDRAM capacity in a compact 66‑TSSOP package for space‑constrained boards requiring standard DDR signaling.
• Consumer and commercial electronics — Suitable for designs that require DDR memory with programmable burst lengths, auto refresh, and standard 2.5 V I/O.
• Legacy DDR system designs — Supports established DDR timing grades and common DDR control features (DQS, DLL, differential clock) for integration into existing DDR architectures.

Unique Advantages

• High effective data rate: Double-data-rate operation with 200 MHz clocking enables two transfers per cycle for increased throughput.
• Compact board footprint: 66‑TSSOP package (10.16 mm width) offers a small form factor for dense PCB layouts.
• Flexible timing modes: Programmable burst lengths (2, 4, 8) and defined speed-grade timing (-5B) provide adaptable performance to match system requirements.
• Standard 2.5 V I/O: SSTL_2 compatible signaling simplifies interface design with common DDR I/O standards.
• Concurrency and control: Four internal banks plus concurrent auto precharge support improve memory access efficiency in multi‑bank workloads.
• Commercial temperature rating: Rated for operation from 0°C to +70°C for a broad range of commercial applications.

Why Choose MT46V128M4TG-5B:D TR?

The MT46V128M4TG-5B:D TR delivers a proven DDR SDRAM feature set—including DDR pipelined architecture, DQS/DLL timing support, and programmable burst lengths—in a compact 66‑pin TSSOP package. Its 512 Mbit capacity (128M × 4) and four internal banks provide a balance of density and concurrent-access capability for systems that require standard 2.5 V DDR memory.

This part is well suited to designs that prioritize integration into established DDR signaling environments, compact PCB footprints, and commercial-temperature operation. Its defined timing grade and interface features help simplify memory subsystem design and timing closure for engineers working with parallel DDR memory architectures.

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