MT46V128M4TG-75:D TR
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 1,563 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 128M x 4 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V128M4TG-75:D TR – IC DRAM 512Mbit Parallel 66-TSSOP
The MT46V128M4TG-75:D TR is a 512 Mbit DDR SDRAM organized as 128M x 4, provided in a 66-TSSOP (0.400", 10.16 mm width) package. It is a volatile, parallel-interface DRAM device designed for board-level memory implementations that require a compact footprint and standard DDR timing.
Key characteristics include a 133 MHz clock frequency, 750 ps access time, a 15 ns write cycle time (word/page), and an operating supply range of 2.3 V to 2.7 V. The device is specified for an ambient operating temperature range of 0°C to 70°C (TA).
Key Features
- Memory Core 512 Mbit capacity organized as 128M × 4, implemented as DDR SDRAM (SDRAM - DDR).
- Performance 133 MHz clock frequency with a 750 ps access time and 15 ns write cycle time (word/page) for predictable DDR timing.
- Interface Parallel memory interface suitable for standard DDR board-level integration.
- Power Operates from a 2.3 V to 2.7 V supply range.
- Package & Mounting Supplied in a 66-TSSOP (66-TSOP) package with a 0.400" (10.16 mm) body width; mounting type is standard PCB assembly for volatile memory.
- Operating Conditions Rated for an ambient temperature range of 0°C to 70°C (TA).
Typical Applications
- Embedded memory modules — Used where a 512 Mbit DDR SDRAM with 128M × 4 organization and parallel interface is required on a PCB.
- Board-level system memory — Suitable for designs that require DDR timing at a 133 MHz clock frequency and defined access timing (750 ps).
- Compact footprint designs — Fits applications constrained by PCB space needing a 66-TSSOP package (10.16 mm width).
Unique Advantages
- Standard DDR SDRAM architecture: Provides familiar 128M × 4 DDR organization for straightforward integration into parallel-memory designs.
- Defined timing performance: 133 MHz clock and 750 ps access time with 15 ns write cycle time enable predictable memory behavior for timing-sensitive designs.
- Wide supply tolerance: 2.3 V to 2.7 V operating range allows compatibility with common DDR supply rails.
- Compact 66-TSSOP package: 0.400" (10.16 mm) body width reduces PCB area compared with larger memory packages.
- Clear operating range: Specified 0°C to 70°C ambient temperature rating for standard commercial environments.
Why Choose MT46V128M4TG-75:D TR?
The MT46V128M4TG-75:D TR delivers a 512 Mbit DDR SDRAM option with defined timing and a compact 66-TSSOP package, making it suitable for board-level memory implementations where footprint and predictable DDR performance matter. Its 128M × 4 organization, 133 MHz clock, and explicit access and cycle times support designs that need clear timing margins.
Manufactured by Micron Technology Inc., this device is positioned for engineers and procurement teams designing or sourcing parallel-interface DRAM for commercial-temperature applications, offering a balance of capacity, timing specification, and package density.
Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the MT46V128M4TG-75:D TR.
