MT46V128M4TG-6T:D TR

The MT46V128M4TG-6T:D TR is a 512 Mbit DDR SDRAM device organized as 128M x 4 (32M x 4 x 4 banks) in a 66‑pin TSOP package. It implements an internal, pipelined double‑data‑rate architecture with source‑synchronous DQS to deliver two data accesses per clock cycle.

This device targets designs requiring parallel DDR memory with 2.5 V I/O signaling, operation at up to 167 MHz (speed grade 6T), and a commercial temperature rating of 0°C to 70°C.

Key Features

• Core & memory architecture  Double Data Rate (DDR) SDRAM with an internal pipelined DDR architecture and four internal banks for concurrent operation; organized as 128M x 4 (32M x 4 x 4 banks).
• Performance & timing  Supports a clock frequency up to 167 MHz for the 6T speed grade; access time listed as 700 ps and a write cycle time (word page) of 15 ns.
• Interfaces & data capture  Parallel memory interface with bidirectional data strobe (DQS) for source‑synchronous data capture, differential clock inputs (CK/CK#), and data mask (DM) support.
• Voltage & I/O  VDD/VDDQ options listed at +2.5 V ±0.2 V (standard) and +2.6 V ±0.1 V for DDR400; device supply range 2.3 V to 2.7 V and 2.5 V I/O (SSTL_2 compatible).
• Refresh & power control  Supports auto refresh and self refresh (self refresh not available on AT devices) with standard 8K refresh count; concurrent auto precharge option supported.
• Package & temperature  Available in a 66‑TSSOP (0.400", 10.16 mm width) plastic package and rated for commercial operation from 0°C to +70°C.
• Timing control & reliability  On‑die DLL to align DQ and DQS transitions with CK, programmable burst lengths (2, 4, 8), and tRAS lockout support for controlled timing behavior.

Typical Applications

• Commercial embedded systems  Provides 512 Mbit DDR memory for commercial designs requiring a 66‑TSSOP footprint and standard commercial temperature operation (0°C to +70°C).
• Board‑level DDR memory expansion  Used where parallel DDR SDRAM is required in a compact TSOP package for system memory or buffering.
• Systems requiring source‑synchronous capture  Applications that rely on DQS and DLL alignment for robust read/write timing at DDR data rates.
• Designs needing programmable burst transfers  Systems that benefit from burst lengths (2, 4, 8) and four internal banks for improved data throughput patterns.

Unique Advantages

• DDR double‑rate throughput: Two data accesses per clock cycle via DDR architecture, enabling higher effective data rates without increasing core clock frequency.
• Source‑synchronous DQS with DLL: Bidirectional DQS and an on‑die DLL align data and strobe transitions with the clock to improve timing margin for reads and writes.
• Compact TSOP footprint: 66‑TSSOP package (0.400" / 10.16 mm width) supports space‑constrained board layouts while providing a standard TSOP pinout.
• Flexible timing and refresh: Programmable burst lengths, four internal banks, and standard auto/self refresh modes provide adaptable memory behavior for varied access patterns.
• Standard 2.5 V I/O compatibility: VDD/VDDQ options and SSTL_2 compatible 2.5 V I/O signaling accommodate conventional DDR interface requirements.
• Commercial temperature rating: Specified for 0°C to +70°C operation for use in general commercial electronic products.

Why Choose MT46V128M4TG-6T:D TR?

The MT46V128M4TG-6T:D TR delivers a 512 Mbit parallel DDR SDRAM option with proven DDR features—source‑synchronous DQS, on‑die DLL, programmable burst lengths, and four internal banks—packaged in a compact 66‑TSSOP. Its supported clock rate (up to 167 MHz for the 6T grade), 2.5 V I/O, and commercial temperature rating make it suitable for designs that need reliable DDR performance in a small TSOP footprint.

Manufactured by Micron Technology Inc., this device is appropriate for engineers specifying board‑level DDR memory for commercial systems where standard DDR signaling, timing control, and compact packaging are required.

Request a quote or submit an inquiry to get pricing, availability, and lead‑time information for the MT46V128M4TG-6T:D TR.