MT46V16M16BG-5B:F TR

The MT46V16M16BG-5B:F TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It implements an internal pipelined double-data-rate architecture with differential clock inputs and source-synchronous data capture for high-throughput memory transfers.

Designed for board-level memory expansion in commercial-temperature systems, the device delivers 200 MHz clock operation (5 ns cycle time at CL=3), 2.5 V nominal supply, and a compact 60-ball FBGA (8 mm × 14 mm) package to support dense system designs.

Key Features

• Core Architecture Internal, pipelined DDR architecture providing two data transfers per clock cycle and four internal banks for concurrent operation.
• Memory Organization & Capacity 256 Mbit capacity configured as 16M × 16 with data mask (DM) available per byte and two DQS strobes for byte-aligned capture on x16 devices.
• Timing & Performance 5 ns cycle time (–5B timing grade) with 200 MHz clock rate and access window/timing characteristics specified for CL = 3; listed access time 700 ps.
• Interface & Data Capture Differential clock inputs (CK/CK#), bidirectional DQS transmitted/received with data (source-synchronous), and DLL to align DQ/DQS with CK.
• Power VDD and VDDQ support +2.5 V nominal operation (specified VDD = +2.5 V ±0.2 V; VDD = +2.6 V ±0.1 V for DDR400 option), with SSTL_2-compatible I/O signaling.
• Refresh & Data Integrity Supports auto refresh (8192-cycle refresh count) and optional self-refresh (note: self-refresh not available on AT devices as documented).
• Package & Thermal 60-ball FBGA (8 mm × 14 mm) package; commercial ambient operating temperature range of 0°C to +70°C as specified.
• Burst & Command Flexibility Programmable burst lengths 2, 4, or 8 with command timing entered on positive CK edges and concurrent auto precharge option supported.

Typical Applications

• Board-Level Memory Expansion Use as on-board DDR SDRAM where a 256 Mbit, 16-bit-wide parallel memory is required in a compact FBGA footprint.
• Commercial Embedded Systems Suitable for commercial-temperature designs requiring 2.5 V DDR SDRAM operation and defined timing at 200 MHz clock rate.
• High-Speed Data Buffers Applicable where source-synchronous data capture (DQS/DQ) and DLL alignment are needed for reliable read/write transfers.

Unique Advantages

• Deterministic DDR Timing: –5B timing grade provides a 5 ns cycle time (CL = 3) and specified data-out and access windows for predictable timing margins.
• Source-Synchronous Data Capture: Bidirectional DQS and DLL alignment improve read/write timing alignment between DQ and clock signals.
• Compact High-Density Package: 60-ball FBGA (8×14 mm) delivers 256 Mbit capacity in a small board footprint for space-constrained assemblies.
• Flexible Burst and Bank Control: Programmable burst lengths and four internal banks enable efficient data block transfers and concurrent bank operation.
• Industry-Documented Specifications: Detailed timing, electrical, and package information provided in the manufacturer datasheet for design validation and integration.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V16M16BG-5B:F TR positions itself as a practical 256 Mbit DDR SDRAM option for commercial-temperature designs that require a 16-bit parallel interface, defined 5 ns cycle timing, and a compact 60-ball FBGA package. Its DDR architecture, DQS/DQ source-synchronous capture, and DLL timing alignment support predictable high-speed transfers at a 200 MHz clock rate.

This device is suited to board-level memory implementations where documented timing behavior, programmable burst control, and a small package footprint are priorities. The included datasheet details electrical, timing, refresh, and package specifications to support design-in, validation, and production planning.

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