MT46V16M16CY-5B AAT:M

IC DRAM 256MBIT PARALLEL 60FBGA
Part Description

IC DRAM 256MBIT PARALLEL 60FBGA

Quantity 1,161 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeAutomotive
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCN3A991B1AHTS Code8542.32.0071

Overview of MT46V16M16CY-5B AAT:M – IC DRAM 256MBIT PARALLEL 60FBGA

The MT46V16M16CY-5B AAT:M is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and is available in an automotive temperature grade with AEC-Q100 qualification.

Designed for systems that require compact, high-speed volatile memory, this device offers a 200 MHz clock rating, a 700 ps access time, and a supply range of 2.5 V to 2.7 V, making it suitable for high-reliability environments and temperature ranges from −40°C to 105°C.

Key Features

  • Core / Architecture Internal pipelined DDR architecture enabling two data accesses per clock cycle; differential clock inputs (CK/CK#) and DLL alignment of DQ/DQS with CK.
  • Memory Organization & Capacity 256 Mbit capacity organized as 16M × 16 with four internal banks for concurrent operation.
  • Data I/O and Strobe Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices provide two DQS signals (one per byte) and two data mask (DM) signals.
  • Performance / Timing Speed grade -5B with a 5 ns cycle time (CL = 3) supporting a 200 MHz clock rate; specified access time of 700 ps and a word-page write cycle time of 15 ns.
  • Power VDD and VDDQ supply range from 2.5 V to 2.7 V (with DDR400-specific VDD/VDDQ options noted in datasheet); I/O standard compatible with 2.5 V SSTL_2 signaling.
  • Refresh and Self-Management Supports auto refresh (64 ms/8192-cycle and 16 ms/8192-cycle modes shown in datasheet). Note: self-refresh is not available on AAT (automotive) devices.
  • Qualification & Reliability AEC-Q100 qualified and offered in an automotive temperature grade (−40°C to +105°C) with PPAP submission and 8D response capability listed in the datasheet.
  • Package 60-ball TFBGA (8 mm × 12.5 mm) package (60-FBGA footprint) suitable for surface-mount assembly in space-constrained designs.

Typical Applications

  • Automotive electronic systems Use as volatile DDR working memory in automotive platforms requiring AEC-Q100 qualification and operation from −40°C to +105°C.
  • High-temperature embedded systems Provides compact DDR memory where operation across extended temperature ranges and automotive-grade qualification are required.
  • High-speed parallel buffering Serves as high-speed buffering or working memory for systems utilizing a parallel DDR interface with source-synchronous DQS signaling.

Unique Advantages

  • Automotive-grade qualification: AEC-Q100 qualification and an AAT temperature rating (−40°C to +105°C) support deployment in automotive and harsh-environment designs.
  • Source-synchronous data capture: Bidirectional DQS and DLL alignment improve data timing margins for reliable high-speed DDR transfers.
  • Compact FBGA footprint: 60-ball FBGA (8 mm × 12.5 mm) package minimizes board area while providing the required I/O for x16 operation.
  • Deterministic timing: Speed grade -5B with 5 ns cycle time (CL = 3) and a 200 MHz clock rating supports predictable DDR timing characteristics.
  • Design-level robustness: Four internal banks, programmable burst lengths (BL = 2, 4, 8), and auto-refresh options provide flexibility for concurrent operation and memory management strategies.

Why Choose MT46V16M16CY-5B AAT:M?

The MT46V16M16CY-5B AAT:M combines a 256 Mbit DDR SDRAM architecture with automotive-grade qualification and extended temperature operation, offering a compact, high-speed memory solution for designs that require reliable volatile storage in demanding environments. Its source-synchronous DQS, DLL alignment, and defined timing parameters support predictable DDR operation in parallel-interface systems.

This device is well-suited for engineers specifying automotive or high-reliability embedded memory where form factor, timing determinism, and qualification traceability are key selection criteria, and where a 2.5 V I/O environment and 200 MHz clock rating meet system requirements.

Request a quote or submit an inquiry to our sales team for pricing, lead times, and configuration availability for the MT46V16M16CY-5B AAT:M.

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