MT46V16M16CY-5B AAT:M
| Part Description |
IC DRAM 256MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,161 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Automotive | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT46V16M16CY-5B AAT:M – IC DRAM 256MBIT PARALLEL 60FBGA
The MT46V16M16CY-5B AAT:M is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and is available in an automotive temperature grade with AEC-Q100 qualification.
Designed for systems that require compact, high-speed volatile memory, this device offers a 200 MHz clock rating, a 700 ps access time, and a supply range of 2.5 V to 2.7 V, making it suitable for high-reliability environments and temperature ranges from −40°C to 105°C.
Key Features
- Core / Architecture Internal pipelined DDR architecture enabling two data accesses per clock cycle; differential clock inputs (CK/CK#) and DLL alignment of DQ/DQS with CK.
- Memory Organization & Capacity 256 Mbit capacity organized as 16M × 16 with four internal banks for concurrent operation.
- Data I/O and Strobe Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices provide two DQS signals (one per byte) and two data mask (DM) signals.
- Performance / Timing Speed grade -5B with a 5 ns cycle time (CL = 3) supporting a 200 MHz clock rate; specified access time of 700 ps and a word-page write cycle time of 15 ns.
- Power VDD and VDDQ supply range from 2.5 V to 2.7 V (with DDR400-specific VDD/VDDQ options noted in datasheet); I/O standard compatible with 2.5 V SSTL_2 signaling.
- Refresh and Self-Management Supports auto refresh (64 ms/8192-cycle and 16 ms/8192-cycle modes shown in datasheet). Note: self-refresh is not available on AAT (automotive) devices.
- Qualification & Reliability AEC-Q100 qualified and offered in an automotive temperature grade (−40°C to +105°C) with PPAP submission and 8D response capability listed in the datasheet.
- Package 60-ball TFBGA (8 mm × 12.5 mm) package (60-FBGA footprint) suitable for surface-mount assembly in space-constrained designs.
Typical Applications
- Automotive electronic systems Use as volatile DDR working memory in automotive platforms requiring AEC-Q100 qualification and operation from −40°C to +105°C.
- High-temperature embedded systems Provides compact DDR memory where operation across extended temperature ranges and automotive-grade qualification are required.
- High-speed parallel buffering Serves as high-speed buffering or working memory for systems utilizing a parallel DDR interface with source-synchronous DQS signaling.
Unique Advantages
- Automotive-grade qualification: AEC-Q100 qualification and an AAT temperature rating (−40°C to +105°C) support deployment in automotive and harsh-environment designs.
- Source-synchronous data capture: Bidirectional DQS and DLL alignment improve data timing margins for reliable high-speed DDR transfers.
- Compact FBGA footprint: 60-ball FBGA (8 mm × 12.5 mm) package minimizes board area while providing the required I/O for x16 operation.
- Deterministic timing: Speed grade -5B with 5 ns cycle time (CL = 3) and a 200 MHz clock rating supports predictable DDR timing characteristics.
- Design-level robustness: Four internal banks, programmable burst lengths (BL = 2, 4, 8), and auto-refresh options provide flexibility for concurrent operation and memory management strategies.
Why Choose MT46V16M16CY-5B AAT:M?
The MT46V16M16CY-5B AAT:M combines a 256 Mbit DDR SDRAM architecture with automotive-grade qualification and extended temperature operation, offering a compact, high-speed memory solution for designs that require reliable volatile storage in demanding environments. Its source-synchronous DQS, DLL alignment, and defined timing parameters support predictable DDR operation in parallel-interface systems.
This device is well-suited for engineers specifying automotive or high-reliability embedded memory where form factor, timing determinism, and qualification traceability are key selection criteria, and where a 2.5 V I/O environment and 200 MHz clock rating meet system requirements.
Request a quote or submit an inquiry to our sales team for pricing, lead times, and configuration availability for the MT46V16M16CY-5B AAT:M.