MT46V16M16CY-5B AIT:M

The MT46V16M16CY-5B AIT:M is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA (8 mm × 12.5 mm) package. It implements an internal pipelined double-data-rate architecture with differential clock inputs for source-synchronous, high-throughput data transfer.

Designed and qualified for automotive-grade applications (AEC-Q100) with an operating temperature range of -40°C to +85°C, this device targets embedded systems that require robust, high-speed volatile memory in compact BGA form factors.

Key Features

• Core / Architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle and differential clock inputs (CK, CK#).
• Memory Organization 256 Mbit capacity organized as 16M × 16 with four internal banks for concurrent operation.
• Data I/O and Timing Bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS signals (one per byte) and two data masks (DM). Programmable burst lengths of 2, 4, or 8 and a typical clock frequency point at 200 MHz (‑5B timing grade).
• Performance Access time of 700 ps and write cycle time (word page) of 15 ns; timing grade -5B supports up to a 200 MHz clock rate (CL = 3).
• Voltage and I/O Supply range VDD / VDDQ = 2.3 V to 2.7 V (nominal 2.5 V option per datasheet); 2.5 V I/O (SSTL_2-compatible behavior noted in datasheet).
• Reliability & Qualification AEC-Q100 qualified with automotive-grade marking options and PPAP/8D documentation noted in the datasheet.
• Refresh and Power Management Auto refresh supported (8192-cycle refresh count) and self-refresh supported for the AIT (industrial) variant.
• Package 60-ball TFBGA (60-FBGA) package, 8 mm × 12.5 mm footprint for compact board-level integration.
• Operating Range TA = -40°C to +85°C for the AIT (industrial) temperature grade.

Typical Applications

• Automotive Electronic Modules Suitable as system memory for automotive control and embedded modules that require AEC-Q100 qualification and operation to -40°C/+85°C.
• In‑vehicle Data Buffering Use for high-rate buffering and transient data storage where DDR throughput and byte-level DQS/DM control are needed.
• Industrial Embedded Systems Compact FBGA package and extended temperature rating make it applicable for industrial embedded controllers requiring volatile DDR memory.

Unique Advantages

• AEC-Q100 Qualification: Provides documented automotive-grade qualification for designs that require component-level AEC compliance.
• DDR Performance in Compact Package: DDR architecture with DLL-aligned DQ/DQS and a 60-ball FBGA (8×12.5 mm) footprint supports high throughput in space-constrained layouts.
• Byte-level Strobe and Masking: Bidirectional DQS and dual DM on x16 devices enable precise, source-synchronous data capture and per-byte write masking.
• Broad Operating Voltage Range: VDD/VDDQ support from 2.3 V to 2.7 V provides flexibility for systems using nominal 2.5 V DDR I/O environments.
• Programmed Burst and Refresh Options: Programmable burst lengths (2, 4, 8) and standard auto-refresh/self-refresh features support common memory access patterns and power management strategies.
• Automotive/Industrial Temperature Range: Rated for -40°C to +85°C (AIT) to meet many embedded and vehicle environment thermal requirements.

Why Choose MT46V16M16CY-5B AIT:M?

The MT46V16M16CY-5B AIT:M combines a 256 Mbit DDR SDRAM organization with automotive-grade qualification and compact FBGA packaging to deliver high-speed volatile memory suitable for embedded and vehicular systems. Its DDR internal pipeline, bidirectional DQS, and programmable burst modes provide predictable timing and throughput for synchronous data buffering and system memory tasks.

This device is well suited to designers targeting reliable, qualified DDR memory in constrained board space and temperature-challenged environments, offering documented timing options, refresh control, and a nominal 2.5 V I/O supply window for integration into established DDR signaling ecosystems.

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