MT46V16M16CY-5B XIT:M TR

The MT46V16M16CY-5B XIT:M TR is a 256 Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface. It implements DDR SDRAM technology and is supplied in a 60-ball FBGA package.

With a 200 MHz clock rating, 700 ps access time and a supply voltage range of 2.5 V to 2.7 V, this device targets designs that require compact, fast volatile memory in a small BGA footprint and an extended operating temperature range.

Key Features

• Memory Core: 256 Mbit capacity organized as 16M × 16, providing a parallel 16-bit data path.
• Technology: DDR SDRAM architecture designed for double-data-rate operation with a specified 200 MHz clock frequency.
• Performance: 700 ps access time and a write cycle time (word/page) of 15 ns for predictable memory timing.
• Power Supply: Operates from a 2.5 V to 2.7 V supply range.
• Package: 60-ball TFBGA / 60-FBGA (8 × 12.5) package for compact board-level integration.
• Operating Temperature: Specified for −40°C to 85°C (TA), supporting a wide ambient temperature range.
• Interface: Parallel memory interface suitable for designs using DDR parallel signaling.

Typical Applications

• Parallel DDR memory subsystems — Use as on-board 256 Mbit DDR SDRAM in systems that require a 16-bit parallel memory device.
• Buffering and temporary storage — Provide volatile data storage with 200 MHz clock performance and 15 ns write cycle timing.
• Compact board designs — Small 60-FBGA package supports space-constrained PCB layouts while offering standard DDR functionality.

Unique Advantages

• Defined DDR operation: 200 MHz clock frequency and DDR SDRAM technology deliver predictable double-data-rate behavior tied to the specified timing metrics.
• Clear timing specifications: 700 ps access time and 15 ns write cycle time provide engineers with concrete parameters for system timing budgets.
• Wide temperature capability: −40°C to 85°C (TA) rating supports deployment across a broad range of ambient conditions.
• Compact BGA footprint: 60-TFBGA / 60-FBGA (8 × 12.5) package enables high-density board integration.
• Standard supply range: 2.5 V–2.7 V operation aligns with typical DDR voltage domains for compatible system power design.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V16M16CY-5B XIT:M TR positions itself as a straightforward, specification-driven DDR SDRAM device for designs needing a 256 Mbit parallel memory element with defined timing and voltage requirements. Its 16M × 16 organization, 200 MHz clock rating and compact 60-FBGA package make it suitable for integration where PCB space and predictable DDR timing are priorities.

This device is appropriate for engineers and procurement teams seeking a documented DDR DRAM component with explicit access time, write cycle timing, supply voltage range and ambient temperature specifications to support robust system design and qualification activities.

Request a quote or submit an inquiry to receive pricing and availability information for the MT46V16M16CY-5B XIT:M TR.