MT46V16M16CY-5B:M TR

The MT46V16M16CY-5B:M TR is a 256 Mbit volatile DDR SDRAM device organized as 16M × 16 with a parallel memory interface. It provides synchronous DRAM storage in a compact 60-TFBGA package and is specified for operation from 0°C to 70°C and a supply voltage range of 2.5 V to 2.7 V.

Key performance characteristics include a 200 MHz clock frequency, a 700 ps access time, and a 15 ns write cycle time for word page operations, making it suitable where parallel DDR memory with deterministic timing is required.

Key Features

• Memory Core 256 Mbit DDR SDRAM organized as 16M × 16 for parallel data access and predictable memory mapping.
• Technology SDRAM – DDR architecture supporting synchronous operation at a 200 MHz clock frequency.
• Timing Fast access characteristics with a 700 ps access time and a 15 ns write cycle time (word page).
• Power Operates from a 2.5 V to 2.7 V supply range.
• Interface Parallel memory interface for direct connection to compatible memory controllers.
• Package 60-TFBGA (60-FBGA, 8 × 12.5) package case for surface-mount assembly in space-constrained designs.
• Operating Conditions Specified operating ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• System Memory Expansion Provides 256 Mbit of volatile DDR SDRAM capacity where parallel DDR memory is required.
• Embedded Memory Subsystems Integration as on-board DRAM for embedded platforms that use a 16-bit data organization.
• Board-Level DRAM Used on PCBs needing a compact 60-TFBGA packaged DDR memory device operating at standard industrial temperatures and 2.5–2.7 V supplies.

Unique Advantages

• Established DDR SDRAM architecture: Delivers synchronous DDR operation at a 200 MHz clock frequency for compatible system controllers.
• Compact FBGA package: 60-TFBGA package (60-FBGA, 8 × 12.5) enables surface-mount placement in space-constrained board layouts.
• Deterministic timing: 700 ps access time and 15 ns write cycle time provide predictable memory timing for system design.
• Industry-standard voltage range: 2.5 V to 2.7 V supply compatibility with systems designed around standard DDR power rails.
• Clear operating window: Specified for 0°C to 70°C ambient temperature for designs targeting that temperature class.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V16M16CY-5B:M TR positions as a straightforward 256 Mbit DDR SDRAM solution offering a 16M × 16 organization, 200 MHz clock operation, and compact 60-TFBGA packaging. Its documented timing (700 ps access, 15 ns write cycle) and supply/temperature specifications make it suitable for designs requiring a known-performance parallel DDR memory device.

This device is appropriate for engineers specifying board-level DDR memory where a 256 Mbit, parallel-interface SDRAM is required, and where the 2.5–2.7 V supply and 0°C–70°C operating range align with system constraints. The clear, verifiable specifications support predictable integration and long-term part selection decisions.

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