MT46V16M16FG-6:F TR

The MT46V16M16FG-6:F TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA (8 mm × 14 mm) package. It implements an internal, pipelined double-data-rate architecture with four internal banks and source-synchronous data capture for high-throughput bursts and concurrent operation.

Designed for systems requiring compact, low-voltage DDR memory, the device supports 2.3 V–2.7 V supply operation, a 167 MHz clock rate (DDR333 timing), and commercial temperature operation from 0 °C to 70 °C, making it suitable for embedded and consumer applications that need fast, byte-wide DRAM storage.

Key Features

• Core / DDR Architecture Internal pipelined DDR architecture enabling two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization & Capacity 256 Mbit capacity organized as 16M × 16 with two data bytes (x16 configuration).
• Performance & Timing Supports DDR operation at 167 MHz (DDR333) with a 6 ns cycle time (CL = 2.5) and an access window specification; write cycle time (word page) specified at 15 ns and measured access time of 700 ps.
• Data strobes and masking Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; includes data mask (DM) for write masking (x16 has two DM signals, one per byte).
• Burst and refresh features Programmable burst lengths of 2, 4, or 8, with auto-refresh and self-refresh support (self-refresh availability noted in datasheet options).
• Clocking and alignment Differential clock inputs (CK and CK#) with a DLL to align DQ/DQS transitions with CK; DQS edge-aligned for READs and center-aligned for WRITEs.
• Voltage and I/O compatibility VDD/VDDQ operating ranges within 2.3 V–2.7 V; 2.5 V I/O compatible with SSTL_2 signalling per datasheet details.
• Package & temperature 60-ball FBGA package (8 mm × 14 mm) with commercial temperature rating of 0 °C to +70 °C (TA).

Typical Applications

• Embedded systems — Byte-wide DDR storage for program/data buffers and system memory in compact, board-level designs.
• Consumer electronics — Frame buffering and temporary data storage where compact FBGA packaging and DDR throughput are required.
• Networking and communications — Packet buffering and temporary storage leveraging DDR bursts and concurrent bank operation.

Unique Advantages

• High-throughput DDR operation: Two data transfers per clock cycle plus source-synchronous DQS support improves effective data bandwidth for burst transfers.
• Byte-level write control: Dual data-mask signals (x16 configuration) enable selective write masking per byte, simplifying data management.
• Flexible burst lengths: Programmable burst lengths (2, 4, 8) allow tuning for different access patterns and system requirements.
• Compact FBGA footprint: 60-ball FBGA (8 × 14 mm) offers a small board area for space-constrained designs while maintaining DDR functionality.
• Low-voltage operation: 2.3 V–2.7 V supply range with 2.5 V I/O compatibility supports common low-voltage system rails.

Why Choose MT46V16M16FG-6:F TR?

The MT46V16M16FG-6:F TR delivers a compact, parallel DDR SDRAM solution with an internal pipelined DDR architecture, source-synchronous DQS, and four-bank concurrency for robust burst performance. Its 16M × 16 organization, 256 Mbit capacity, and programmable burst options make it suitable for embedded systems and consumer applications that require byte-wide DRAM with predictable timing.

With a 60-ball FBGA package, 2.3 V–2.7 V operation, and commercial temperature rating (0 °C to +70 °C), this part fits designs prioritizing compact board footprint and standard DDR signaling. The device’s documented timing options and refresh behavior provide clear integration parameters for system designers.

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