MT46V16M16CY-6:K TR

IC DRAM 256MBIT PAR 60FBGA
Part Description

IC DRAM 256MBIT PAR 60FBGA

Quantity 673 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeCommercial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V16M16CY-6:K TR – IC DRAM 256MBIT PAR 60FBGA

The MT46V16M16CY-6:K TR is a 256 Mbit DRAM device implemented as DDR SDRAM with a 16M × 16 memory organization and a parallel memory interface. It delivers a compact, board-level memory option in a 60-ball FBGA package.

Designed for systems that require medium-density parallel DDR memory, the device provides a 167 MHz clock frequency, 700 ps access time and a supply voltage range of 2.3 V to 2.7 V, operating across an ambient temperature range of 0°C to 70°C.

Key Features

  • Memory Core 256 Mbit DRAM formatted as 16M × 16, providing parallel data organization for straightforward bus integration.
  • Technology & Interface SDRAM – DDR technology with a parallel memory interface and a clock frequency specification of 167 MHz.
  • Performance & Timing Fast access characteristics with a 700 ps access time and a write cycle time (word page) of 15 ns.
  • Power Specified supply voltage range of 2.3 V to 2.7 V for low-voltage DDR operation.
  • Package & Mounting 60-TFBGA package case; supplier device package listed as 60-FBGA (8 × 12.5 mm) for compact board-level integration.
  • Operating Range Ambient operating temperature specified from 0°C to 70°C (TA).

Typical Applications

  • Parallel DDR memory for embedded systems — Provides 256 Mbit DDR SDRAM (16M × 16) for embedded designs that require parallel bus memory at up to 167 MHz clock rates.
  • Board-level memory expansion — Adds medium-density DRAM to systems needing additional volatile storage with defined timing (700 ps access, 15 ns write cycle).
  • Compact, low-voltage designs — Suits designs constrained by board space that operate within a 2.3 V–2.7 V supply envelope, using a 60-ball FBGA footprint (8 × 12.5 mm).

Unique Advantages

  • DDR SDRAM architecture: 16M × 16 organization and DDR SDRAM technology provide a standardized parallel memory topology for predictable integration.
  • Measured timing performance: 700 ps access time and a 15 ns write cycle time offer defined timing characteristics for system designers.
  • Low-voltage operation: 2.3 V–2.7 V supply range supports designs targeting reduced voltage operation.
  • Compact FBGA package: 60-TFBGA / 60-FBGA (8 × 12.5 mm) package enables higher board density and conservative PCB area usage.
  • Defined operating temperature: 0°C to 70°C ambient rating simplifies thermal planning for standard commercial applications.

Why Choose MT46V16M16CY-6:K TR?

The MT46V16M16CY-6:K TR positions itself as a straightforward, medium-density DDR SDRAM option for designs that require a 256 Mbit parallel memory element in a compact FBGA package. Its defined timing, clock frequency, and low-voltage operation make it suitable for designs that need predictable, board-level volatile storage with clear electrical and thermal parameters.

This device is well suited to engineers and procurement teams specifying parallel DDR memory where package footprint, supply voltage range, and timing characteristics are critical selection criteria. Its documented specs support integration, layout planning, and system-level memory budgeting for commercial temperature-range applications.

Request a quote or submit an inquiry to the sales team for pricing, lead times and availability of the MT46V16M16CY-6:K TR.

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