MT46V16M16FG-75:F TR

The MT46V16M16FG-75:F TR is a 256 Mbit parallel DDR SDRAM device organized as 16M × 16. It implements a double data rate architecture with source-synchronous data strobes and internal DLL to align data and strobe timing.

This device is intended for systems that require parallel DDR memory with defined timing and electrical characteristics, offering a balance of density, timing control and a compact 60-ball FBGA package for board-level integration.

Key Features

• Core Architecture  Double Data Rate (DDR) SDRAM with internal pipelined DDR operation enabling two data accesses per clock cycle; differential clock inputs (CK/CK#) and an internal DLL for DQ/DQS alignment.
• Memory Organization & Capacity  256 Mbit total capacity, organized as 16M × 16 (implemented as four internal banks) to support concurrent bank operation.
• Performance  Rated clock frequency 133 MHz with an access time of 750 ps and write cycle time (word/page) of 15 ns, corresponding to the -75 timing grade.
• I/O & Timing  Bidirectional data strobe (DQS) transmitted/received with data (x16 has two strobes, one per byte); data mask (DM) provided (x16 has two DM signals); programmable burst lengths of 2, 4, or 8.
• Power  Supply voltage range 2.3 V to 2.7 V; datasheet nominal VDD/VDDQ options include +2.5 V ±0.2 V (and +2.6 V ±0.1 V for certain DDR400 timing options).
• System Reliability & Refresh  Supports auto refresh (8K refresh cycles) and optional self-refresh modes; four internal banks allow improved concurrency for refresh and access.
• Package & Temperature  60-ball FBGA (8 mm × 14 mm) package (60-FBGA); commercial operating temperature range 0°C to +70°C.

Typical Applications

• Embedded memory subsystems  Provides a parallel DDR SDRAM option for system working memory and board-level memory expansion where 256 Mbit density is required.
• High-speed data buffering  The DDR architecture with source-synchronous DQS and DLL support read/write timing alignment for buffer and FIFO-style data paths.
• Memory module and board-level designs  Standard 60-ball FBGA footprint (8×14 mm) simplifies PCB routing and integration in compact layouts.
• Commercial electronic systems  Commercial temperature rating (0°C to +70°C) fits general-purpose electronic products requiring defined commercial thermal ranges.

Unique Advantages

• High-density 256 Mbit capacity: Delivers 16M × 16 organization to provide significant on-board memory without a large footprint.
• DDR source-synchronous timing: DQS transmitted/received with data and an onboard DLL improve timing margin for read and write operations.
• Flexible supply options: Operates across a 2.3 V–2.7 V supply range with datasheet nominal VDD/VDDQ settings specified for precise system power design.
• Programmable burst lengths and multiple banks: Burst lengths of 2/4/8 and four internal banks enable flexible throughput and concurrent memory operations.
• Compact FBGA package: 60-ball FBGA (8 mm × 14 mm) reduces board area while providing an industry-standard footprint for memory integration.

Why Choose MT46V16M16FG-75:F TR?

The MT46V16M16FG-75:F TR positions itself as a compact, commercially rated 256 Mbit DDR SDRAM option with clear electrical and timing specifications for designers who need parallel DDR memory. Its DDR architecture, source-synchronous DQS, and internal DLL offer defined timing behavior for designs that require predictable read/write alignment.

This device is suitable for engineers and procurement teams building board-level memory solutions that require a 60-ball FBGA footprint, 2.5 V-compatible I/O characteristics, and standard DDR control features such as programmable burst lengths and auto-refresh support.

If you would like pricing, lead-time or a formal quote for MT46V16M16FG-75:F TR, submit a request and our team will provide a quote and availability information to support your design evaluation.