MT46V16M16FG-75:F

The MT46V16M16FG-75:F is a 256 Mbit DDR SDRAM device organized as 16M × 16, offered in a 60-ball FBGA (8 × 14 mm) package. It implements a double-data-rate architecture with internal pipelining and a DLL, delivering two data accesses per clock cycle.

Designed for systems that require parallel DDR memory, the device provides source-synchronous data capture, programmable burst lengths and four internal banks, combining predictable timing behavior with a compact FBGA footprint.

Key Features

• Core DDR Architecture Internal, pipelined double-data-rate architecture with a DLL to align DQ and DQS transitions and four internal banks for concurrent operation.
• Memory Organization 256 Mbit capacity organized as 16M × 16 with data mask (DM) support; x16 configuration includes two DMs and two DQS signals (one per byte).
• Source‑Synchronous Interface Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DQS edge-aligned for READs and center-aligned for WRITEs.
• Programmable Burst and Refresh Programmable burst lengths of 2, 4, or 8, with auto-refresh and self-refresh options documented in the device specification.
• Timing and Performance Clock frequency 133 MHz (speed grade -75) with an access-time parameter consistent with DDR timing; write cycle (word/page) listed at 15 ns.
• Power Supply voltage range 2.3 V to 2.7 V (VDD/VDDQ documented in the datasheet details for applicable speed grades).
• Package and Temperature 60-ball FBGA package (8 mm × 14 mm) and a commercial operating temperature range of 0°C to +70°C (TA).

Typical Applications

• Parallel DDR memory for embedded systems — Provides 256 Mbit of DDR SDRAM in a compact FBGA package for designs using parallel memory interfaces.
• Board-level memory expansion — Useful where a 16-bit wide DDR memory element is required for system memory arrays or buffers.
• High-speed data buffering — Source-synchronous DQS and programmable burst lengths enable predictable, high-rate data transfers in buffer applications.

Unique Advantages

• Source-synchronous data capture: DQS transmitted/received with data supports accurate timing alignment for READ and WRITE operations.
• Flexible burst operation: Programmable burst lengths (2, 4, 8) allow tuning for sequential access patterns and system timing.
• Dual-byte support on x16: Two DQS and two DM signals (x16) provide byte-level control and masking for write operations.
• Compact FBGA footprint: 60-ball FBGA (8×14 mm) package minimizes board area while maintaining DDR signal integrity considerations.
• Commercial temperature rating: Rated for 0°C to +70°C for applications specified for commercial environments.
• Documented DDR features: DLL alignment, four internal banks, auto-refresh and self-refresh options are specified in the device datasheet for reliable operation.

Why Choose MT46V16M16FG-75:F?

The MT46V16M16FG-75:F positions as a straightforward 256 Mbit DDR SDRAM solution where a 16-bit data width, source-synchronous capture and a compact 60-ball FBGA package are required. Its DDR architecture with an internal DLL and four-bank organization supports predictable, high-rate transfers while programmable burst lengths and data-mask features add flexibility for varied access patterns.

This device is suitable for commercial-temperature designs that need a documented DDR SDRAM component with explicit timing, power and package specifications. The datasheet provides detailed electrical and timing parameters to support system integration and BOM planning.

If you would like a formal quote or additional procurement information for the MT46V16M16FG-75:F, please submit a request or inquiry and include your required quantity and lead-time requirements.