MT46V16M16P-5B IT:K TR

IC DRAM 256MBIT PARALLEL 66TSOP
Part Description

IC DRAM 256MBIT PARALLEL 66TSOP

Quantity 847 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V16M16P-5B IT:K TR – IC DRAM 256MBIT PARALLEL 66TSOP

The MT46V16M16P-5B IT:K TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It delivers 200 MHz clock operation with a 700 ps access time and a 15 ns write cycle time for word/page operations.

This device is offered in a 66‑TSSOP (0.400", 10.16 mm width) package, operates from a 2.5 V to 2.7 V supply, and supports an operating temperature range of -40°C to 85°C, providing a compact memory option for designs that require parallel DDR memory in a TSOP footprint.

Key Features

  • Memory Core  256 Mbit capacity organized as 16M × 16 for 16‑bit data width implementations.
  • Technology & Interface  DDR SDRAM with a parallel memory interface supporting standard DDR timing and signaling.
  • Performance  200 MHz clock frequency and 700 ps access time, with a 15 ns write cycle time for word/page writes.
  • Power  Operates from a 2.5 V to 2.7 V supply rail.
  • Package  66‑TSSOP (0.400", 10.16 mm width) package for PCB layout compatibility with TSOP footprints.
  • Operating Range  Rated for -40°C to 85°C (TA) ambient operation.

Typical Applications

  • Parallel DDR memory subsystems  Use as a 256 Mbit DDR SDRAM device in systems requiring a 16‑bit parallel memory interface.
  • Board-level DRAM expansion  Fits TSOP land patterns for adding DRAM capacity in space-constrained board layouts.
  • Embedded memory modules  Provides moderate-density volatile storage for embedded designs needing DDR performance at 200 MHz.

Unique Advantages

  • 256 Mbit density: Provides a defined 16M × 16 organization for straightforward data bus integration.
  • 200 MHz operation with 700 ps access time: Enables predictable timing for systems targeting this clock domain.
  • Compact 66‑TSSOP package: Supplied in a 66‑TSSOP (0.400", 10.16 mm width) package suitable for TSOP-compatible PCB layouts.
  • Standard DDR supply range: Operates from 2.5 V to 2.7 V to match common DDR supply rails.
  • Extended ambient temperature: Rated for -40°C to 85°C to support a wide range of operating environments.
  • Defined write timing: 15 ns write cycle time for word/page operations simplifies timing analysis for memory transactions.

Why Choose MT46V16M16P-5B IT:K TR?

The MT46V16M16P-5B IT:K TR is a focused DDR SDRAM solution offering a 256 Mbit capacity in a 16‑bit organization, combining 200 MHz operation with compact 66‑TSSOP packaging. Its specified access time, write cycle timing, and voltage range provide clear electrical and timing parameters for system designers.

Backed by Micron Technology Inc., this device is suited to designs that require parallel DDR memory in a TSOP footprint and need defined timing and temperature specifications for reliable operation.

Request a quote or submit an inquiry to obtain pricing, availability, and additional ordering information for the MT46V16M16P-5B IT:K TR.

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