MT46V16M16P-5B XIT:M
| Part Description |
IC DRAM 256MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 175 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT46V16M16P-5B XIT:M – IC DRAM 256MBIT PARALLEL 66TSOP
The MT46V16M16P-5B XIT:M is a 256 Mbit volatile DRAM offered by Micron Technology Inc. It implements DDR SDRAM architecture with a 16M × 16 memory organization and a parallel memory interface.
Designed to deliver measurable timing and voltage characteristics, the device operates at a 200 MHz clock frequency with a 700 ps access time, supports a 2.5 V–2.7 V supply range, and is packaged in a 66-TSSOP (0.400", 10.16 mm width) case with an operating temperature range of -40°C to 85°C.
Key Features
- Memory Type & Architecture Volatile DRAM using SDRAM - DDR technology; organized as 16M × 16 to provide a total memory size of 256 Mbit.
- Performance 200 MHz clock frequency and 700 ps access time; write cycle time (word page) specified at 15 ns.
- Interface Parallel memory interface for conventional parallel DRAM system integration.
- Voltage Supply voltage range of 2.5 V to 2.7 V.
- Package 66-TSSOP (0.400", 10.16 mm width) supplier device package.
- Operating Temperature Specified operating temperature range of -40°C to 85°C (TA).
Unique Advantages
- 256 Mbit capacity in a 16M × 16 organization: Provides a clearly defined memory footprint for designs requiring this density and data width.
- DDR SDRAM timing: 200 MHz clock frequency and 700 ps access time support deterministic timing characteristics for system memory operations.
- Standard supply domain: Operates within a 2.5 V–2.7 V range consistent with the device's DDR voltage requirements.
- Compact 66-TSSOP package: Supplied in a 66-TSSOP (0.400", 10.16 mm) package for board-level placement where that footprint is required.
- Extended temperature range: Rated for -40°C to 85°C (TA) to accommodate applications requiring wider ambient temperature tolerance.
- Defined write-cycle timing: Word page write cycle time specified at 15 ns for predictable write performance.
Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?
The MT46V16M16P-5B XIT:M positions itself as a straightforward, specification-driven DDR SDRAM option for designs that require a 256 Mbit parallel memory with defined timing and voltage characteristics. Its combination of 16M × 16 organization, 200 MHz clocking, and 700 ps access time provides clear electrical and timing parameters for system integration.
Offered by Micron Technology Inc. in a 66-TSSOP package and rated for -40°C to 85°C, the device is suitable for applications that require the stated memory density, parallel interface, and supply/temperature ranges. The explicit timing and voltage specifications help designers plan interface and power architectures with measurable parameters.
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