MT46V16M16P-5B:F TR

The MT46V16M16P-5B:F TR is a 256 Mbit volatile DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 66-pin TSSOP package. It implements a double-data-rate architecture with two data transfers per clock cycle and source-synchronous DQS signaling for read/write capture.

This device targets board-level memory applications that require a 256 Mbit parallel DDR memory solution with 2.5 V I/O, programmable burst lengths, and commercial operating range (0 °C to 70 °C). Key value comes from DDR throughput, byte-level data masking, and a compact 66-TSSOP footprint.

Key Features

• Core DDR Architecture Internal, pipelined double-data-rate architecture providing two data accesses per clock cycle; differential clock inputs (CK/CK#) and on-chip DLL for timing alignment.
• Memory Organization 256 Mbit capacity organized as 16M × 16 with four internal banks for concurrent operation and programmable burst lengths (BL = 2, 4, 8).
• Data Strobe and Masking Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices include two DQS signals and two data mask (DM) inputs (one per byte).
• Performance and Timing Rated for up to 200 MHz clock frequency (DDR400 timing grade -5B) with an access window and DQS/DQ alignment characteristics; specified access time 700 ps and write cycle time (word page) 15 ns.
• Voltage and I/O VDD/VDDQ nominal 2.5 V (specified range 2.5 V ±0.2 V or 2.6 V ±0.1 V for DDR400 option); 2.5 V I/O compatible with SSTL_2 signaling.
• Refresh and Reliability Auto refresh and optional self-refresh support; 8192 refresh cycles per 64 ms (commercial timing) as specified in device options.
• Package and Temperature 66-pin TSSOP (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0 °C to 70 °C (TA).

Typical Applications

• Parallel DDR memory subsystems — Board-level memory expansion where a 256 Mbit parallel DDR SDRAM in 66-TSSOP is required.
• Embedded systems — Systems that need a 16M × 16 organization with source-synchronous DQS signaling and byte-level data masking for controlled write operations.
• Consumer and industrial electronics (commercial temperature) — Designs operating within 0 °C to 70 °C that require 2.5 V I/O and DDR data rates up to the -5B timing grade.

Unique Advantages

• DDR throughput with compact footprint: Two data transfers per clock cycle combined with a 66-TSSOP package enables higher bandwidth without large package area.
• Source-synchronous data capture: Bidirectional DQS and DLL alignment simplify timing-critical read/write capture for reliable data transfers.
• Byte-level control: Two data mask inputs on x16 devices allow selective masking of write bytes for finer-grained memory updates.
• Flexible timing options: Programmable burst lengths (2, 4, 8) and defined timing grade (-5B at 200 MHz) provide design flexibility for varied throughput needs.
• SSTL_2-compatible I/O: 2.5 V I/O signaling aligns with SSTL_2 interface requirements for common DDR system designs.

Why Choose MT46V16M16P-5B:F TR?

The MT46V16M16P-5B:F TR delivers a 256 Mbit DDR SDRAM solution that combines double-data-rate performance, source-synchronous DQS signaling, and byte-level masking in a 66-pin TSSOP package. Its 16M × 16 organization, 2.5 V I/O, and -5B timing grade (200 MHz) make it suitable for designs that require compact, parallel DDR memory with defined commercial-temperature operation.

Manufactured by Micron Technology, Inc., the device includes standard DDR features such as internal DLL, four internal banks, auto-refresh, and programmable burst lengths that support reliable operation and predictable timing for system memory subsystems.

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