MT46V16M16P-5B IT:M TR

The MT46V16M16P-5B IT:M TR is a 256 Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface. It operates with a 200 MHz clock frequency and is supplied at 2.5 V to 2.7 V, providing a standard DDR memory option for board-level designs.

This device targets applications requiring a 256 Mbit volatile DRAM with documented timing characteristics (700 ps access time, 15 ns write cycle time word/page) and a 66-TSSOP (10.16 mm width) package footprint, supporting operation across a −40 °C to 85 °C ambient range.

Key Features

• Core / Memory Architecture 256 Mbit DDR SDRAM organized as 16M × 16, providing a parallel 16-bit data path.
• Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word/page) for timing-sensitive designs.
• Power Operates from a 2.5 V to 2.7 V supply range compatible with standard DDR voltage domains.
• Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for surface-mount board designs.
• Operating Temperature Specified for −40 °C to 85 °C ambient operation (TA).
• Memory Interface Parallel DDR interface suitable for systems designed around parallel SDRAM architectures.

Typical Applications

• Systems requiring 256 Mbit DDR memory — For designs that specify a 256 Mbit volatile DRAM organized as 16M × 16 with a parallel interface.
• Board-level memory expansion — Use where a 66-TSSOP packaged DDR device with 2.5 V–2.7 V supply and −40 °C to 85 °C range is required.
• Timing-oriented designs — Suitable for applications that require a 200 MHz clocking environment with documented access and cycle timing.

Unique Advantages

• Standard DDR architecture: Provides a 16-bit parallel DDR memory organization (16M × 16) for straightforward integration into parallel memory subsystems.
• Documented timing: 700 ps access time and 15 ns write cycle time give designers clear electrical timing targets for system timing closure.
• Wide operating range: Specified operation from −40 °C to 85 °C supports a broad set of ambient conditions.
• Industry-standard supply voltage: 2.5 V to 2.7 V operation aligns with common DDR power domains.
• Compact package: 66-TSSOP (10.16 mm width) package enables board-level mounting in space-constrained layouts.

Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?

The MT46V16M16P-5B IT:M TR positions itself as a documented, board-level DDR SDRAM option delivering 256 Mbit capacity with a 16-bit parallel interface, defined timing figures, and a compact 66-TSSOP package. Its electrical and thermal specifications make it suitable for designs that require clearly specified DDR memory behavior within a 2.5 V–2.7 V power domain and −40 °C to 85 °C ambient range.

This device is appropriate for engineers and teams integrating parallel DDR memory into systems where specified access time, write cycle timing, and package footprint are primary selection criteria, offering predictable integration into existing DDR memory subsystems.

If you need pricing, availability, or a formal quote for MT46V16M16P-5B IT:M TR, request a quote or submit an inquiry to receive detailed ordering and lead-time information.