MT46V16M16P-5B XIT:M TR
| Part Description |
IC DRAM 256MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 270 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT46V16M16P-5B XIT:M TR – IC DRAM 256MBIT PARALLEL 66TSOP
The MT46V16M16P-5B XIT:M TR is a 256 Mbit DDR DRAM device organized as 16M × 16 with a parallel memory interface. It implements DDR SDRAM architecture and is specified with a 200 MHz clock frequency, making it suitable for designs that require on-board parallel DDR memory in a 66-TSSOP package.
Key electrical and mechanical attributes include a 2.5 V–2.7 V supply range, 700 ps access time, a 15 ns write cycle time (word/page), and an operating temperature range of −40°C to 85°C (TA), enabling integration into systems with defined timing and environmental requirements.
Key Features
- Memory Core 256 Mbit DRAM organized as 16M × 16 for parallel data paths.
- Technology & Interface DDR SDRAM technology with a parallel memory interface to match parallel bus architectures.
- Performance 200 MHz clock frequency and 700 ps access time; write cycle time (word/page) of 15 ns for deterministic timing.
- Voltage Supply Operates from 2.5 V to 2.7 V, matching common DDR I/O supply ranges for compatible systems.
- Package 66-TSSOP (0.400", 10.16 mm width) provides a compact, surface-mount footprint.
- Operating Temperature Specified for −40°C to 85°C (TA) to cover extended ambient conditions.
- Memory Format & Mounting Volatile DRAM device intended for surface-mount mounting in parallel memory applications.
Unique Advantages
- Density and Organization: 256 Mbit capacity in a 16M × 16 organization provides defined data width for parallel bus designs.
- Deterministic Timing: 200 MHz clock, 700 ps access time, and 15 ns write cycle time support predictable memory timing requirements.
- Industry-Standard Supply Range: 2.5 V–2.7 V supply simplifies integration with systems using standard DDR voltage levels.
- Compact Surface-Mount Package: 66-TSSOP (10.16 mm width) enables high-density board designs while retaining a parallel interface.
- Extended Temperature Range: −40°C to 85°C (TA) offers suitability for applications with wider ambient temperature demands.
Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?
The MT46V16M16P-5B XIT:M TR positions itself as a straightforward DDR SDRAM option where 256 Mbit capacity, parallel interface, and defined timing are required. Its combination of 16M × 16 organization, 200 MHz clock specification, and compact 66-TSSOP package supports designs that need a predictable, board-mountable DDR memory element.
Engineers selecting this device benefit from its explicit electrical and mechanical specifications—voltage range 2.5 V–2.7 V, access time and cycle timing values, and an extended operating temperature range—helping to simplify component selection for systems with these defined requirements.
Request a quote or submit an inquiry to check availability and pricing for the MT46V16M16P-5B XIT:M TR.
