MT46V16M16P-5B:K TR

The MT46V16M16P-5B:K TR is a 256 Mbit Double Data Rate (DDR) SDRAM organized as 16M × 16 with a parallel memory interface in a 66-pin TSSOP package. It implements an internal pipelined DDR architecture with source-synchronous data capture and is intended for board-level memory applications operating in the commercial temperature range (0°C to 70°C).

Designed for high-rate parallel memory access, this device targets systems requiring 2.5V-class DDR operation with up to 200 MHz clocking (DDR transfers) and features timing and I/O primitives to support reliable, byte-granular data transfers.

Key Features

• DDR architecture Internal, pipelined double-data-rate operation delivering two data accesses per clock cycle and differential clock inputs (CK, CK#).
• Memory organization 256 Mbit capacity configured as 16M × 16 with four internal banks for concurrent operation.
• Performance and timing Speed grade -5B supports up to 200 MHz clock (DDR transfers), with an access window and data-out characteristics consistent with DDR timing; typical access-time parameter listed as 700 ps and write cycle time (word page) of 15 ns.
• Data strobes and masks Bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS (one per byte). Data mask (DM) available (x16 has two – one per byte) for write masking.
• Voltage and I/O VDD / VDDQ nominal operation in the 2.5 V range (specified 2.5 V ±0.2 V and documented DDR400 option at 2.6 V ±0.1 V). I/O implemented for SSTL_2-compatible signaling.
• Refresh and power modes Supports auto refresh (8K refresh count) and self-refresh options as described in the product datasheet.
• Package and thermal 66-pin TSSOP (0.400", 10.16 mm width) package; rated for commercial ambient operation from 0°C to +70°C (TA).

Typical Applications

• Board-level memory expansion Used where a compact 66-TSSOP DDR SDRAM is required to provide 256 Mbit of parallel DRAM on system boards.
• Commercial embedded systems Memory for devices and subsystems operating in the 0°C to 70°C temperature range that require DDR performance and burst access modes.
• High-rate parallel memory interfaces Suitable for designs leveraging source-synchronous DQS capture and programmable burst lengths (2, 4, 8) for block transfers.

Unique Advantages

• High-speed DDR transfers: Speed grade -5B enables operation up to 200 MHz (DDR transfers) to support higher data throughput compared with single-edge SDR designs.
• Byte-level strobe and mask: Two DQS and two DM signals on x16 provide per-byte source-synchronous capture and write masking for improved data alignment and control.
• Robust timing options: Programmable burst lengths (2, 4, 8) and DLL alignment of DQ/DQS transitions with CK enable flexible data-transfer schemes and timing margin tuning.
• Compact board footprint: 66-TSSOP (10.16 mm width) package allows integration into space-constrained PCBs while maintaining pinout for parallel DDR operation.
• Standard voltage domain: 2.5 V-class supply and SSTL_2-compatible I/O simplify integration into systems using established DDR signaling levels.

Why Choose MT46V16M16P-5B:K TR?

The MT46V16M16P-5B:K TR offers a compact, parallel DDR SDRAM solution providing 256 Mbit capacity with a 16M × 16 organization and internal features—such as DQS, DLL alignment, four internal banks, and programmable burst lengths—that support predictable, high-rate data transfers. Its 66-TSSOP package and commercial temperature rating make it suitable for board-level memory applications where space and standard 2.5 V DDR signaling are required.

Designers needing a straightforward DDR memory building block for commercial embedded systems or memory subsystems can leverage this device’s timing options, byte-level strobes/masks, and refresh capabilities to implement reliable parallel DRAM interfaces.

Request a quote or submit a pricing and availability inquiry to receive more information and support for integrating the MT46V16M16P-5B:K TR into your design.