MT46V16M16P-6T IT:K TR
| Part Description |
IC DRAM 256MBIT PAR 66TSOP |
|---|---|
| Quantity | 90 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V16M16P-6T IT:K TR – IC DRAM 256Mbit Parallel, 66-TSSOP
The MT46V16M16P-6T IT:K TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It delivers synchronous DRAM performance with a clock frequency of 167 MHz and an access time of 700 ps.
Designed for systems requiring mid-density volatile memory in a compact 66-TSSOP package, the device operates across a 2.3 V to 2.7 V supply range and an operating temperature span of -40°C to 85°C (TA), enabling deployment in a range of electronic designs.
Key Features
- Memory Core 256 Mbit SDRAM organized as 16M × 16 providing parallel DDR memory storage.
- Performance Synchronous DDR operation with a clock frequency of 167 MHz and an access time of 700 ps for predictable memory timing.
- Interface & Organization Parallel memory interface with 16-bit wide organization to match parallel data bus requirements.
- Timing Write cycle time (word/page) specified at 15 ns to define write throughput characteristics.
- Power Operates from a 2.3 V to 2.7 V supply, suitable for systems designed around low-voltage DDR signaling.
- Package & Temperature Range Supplied in a 66-TSSOP package (0.400", 10.16 mm width) and rated for an operating range of -40°C to 85°C (TA).
Typical Applications
- Parallel DDR system memory — Acts as synchronous DRAM storage where a parallel DDR interface and 16-bit data width are required.
- Embedded device memory — Provides mid-density volatile memory for embedded controllers and processors that accept a parallel DDR memory interface.
- Buffer and frame storage — Suitable for designs needing temporary data buffers or frame buffers implemented with DDR SDRAM in a compact package.
Unique Advantages
- Compact package — 66-TSSOP footprint (0.400", 10.16 mm width) minimizes PCB area for space-constrained designs.
- Defined timing performance — 167 MHz clock frequency and 700 ps access time provide clear performance parameters for timing-critical designs.
- Mid-density capacity — 256 Mbit (16M × 16) offers a balance of capacity and board-level resource efficiency.
- Low-voltage operation — 2.3 V to 2.7 V supply range supports low-voltage DDR system architectures.
- Wide operating temperature — Rated from -40°C to 85°C (TA) for use in varied environmental conditions.
Why Choose IC DRAM 256MBIT PAR 66TSOP?
The MT46V16M16P-6T IT:K TR positions itself as a straightforward, mid-density DDR SDRAM option for designs that require a parallel 16-bit memory interface, predictable timing, and compact packaging. Its documented clock frequency, access time, and write cycle specifications make system-level timing integration and validation more direct.
This device is suited for engineers specifying volatile DDR memory in embedded systems, buffering applications, or other electronic designs that match the package, voltage, and temperature constraints listed in the product specifications.
Request a quote or submit an inquiry to receive pricing, availability, and additional purchasing information for MT46V16M16P-6T IT:K TR.
