MT46V16M16P-6T:F TR

The MT46V16M16P-6T:F TR is a 256 Mbit DDR SDRAM device in a 66-TSSOP (0.400", 10.16 mm width) package, organized as 16M × 16 with four internal banks. It implements an internal pipelined double-data-rate architecture with two data accesses per clock cycle and a parallel memory interface.

Designed for applications requiring mid-density parallel DDR memory, the device supports a timing grade that enables a 167 MHz clock rate, low-voltage operation (2.3–2.7 V), and DDR features such as DLL, DQS-based source-synchronous capture, programmable burst lengths, and auto-refresh.

Key Features

• Core Architecture  Double Data Rate (DDR) SDRAM with an internal pipelined DDR architecture and a DLL to align DQ/DQS transitions with CK.
• Memory Organization  256 Mbit capacity arranged as 16M × 16 with four internal banks and support for programmable burst lengths (BL = 2, 4, 8).
• Performance & Timing  Supports a 167 MHz clock frequency (–6T timing grade) with an access time of 700 ps and a write cycle time (word/page) of 15 ns; data-out window for the 6T grade is specified as 2.0 ns.
• Interface & I/O  Parallel memory interface with bidirectional data strobe (DQS); x16 devices include two DQS signals (one per byte) and two data mask (DM) signals. Differential clock inputs (CK/CK#) are used for timing.
• Power  Nominal VDD/VDDQ of 2.5 V with an operating supply range of 2.3 V to 2.7 V; 2.5 V I/O (SSTL_2-compatible) is supported.
• System Reliability & Refresh  Auto refresh and support for 8K refresh cycles (64 ms for Commercial & Industrial modes as documented); self-refresh option noted in the device family documentation (self refresh not available on AT devices).
• Package & Temperature Range  66‑pin TSSOP (66‑TSOP) package (0.400" / 10.16 mm width); commercial operating temperature 0°C to +70°C (TA).

Typical Applications

• Embedded memory systems  Use as on-board parallel DDR memory where a 256 Mbit capacity and x16 data width are required in a 66‑TSSOP footprint.
• Buffering and frame storage  Suitable for designs that need DDR buffering with programmable burst lengths and source-synchronous DQS timing.
• Board-level integration  Provides a compact TSOP package option for legacy or space-constrained PCB layouts requiring parallel DDR SDRAM.

Unique Advantages

• Proven DDR feature set:  Internal DLL, DQS source-synchronous capture, programmable burst lengths and auto-refresh simplify timing and memory control in DDR systems.
• Mid-density x16 organization:  256 Mbit (16M × 16) configuration with four internal banks enables commonly needed capacity and concurrency for moderate memory footprints.
• 66‑TSSOP package:  Board-friendly TSOP footprint (0.400" / 10.16 mm) that supports compact PCB implementations and straightforward soldering processes.
• Low-voltage operation:  Nominal 2.5 V operation with a supply range of 2.3–2.7 V supports low-power designs and SSTL_2-compatible I/O.
• Timing grade for 167 MHz:  The –6T timing grade provides a specified data-out window and DQS–DQ skew characteristics suitable for 167 MHz clock operation.

Why Choose IC DRAM 256MBIT PAR 66TSOP?

The MT46V16M16P-6T:F TR offers a compact, mid-density DDR SDRAM solution with a standard set of DDR features—DLL alignment, DQS-based source-synchronous capture, programmable burst lengths, and auto-refresh—packaged in a 66‑TSSOP footprint. Its 16M × 16 organization, four internal banks, and –6T timing grade (supporting up to 167 MHz) make it suitable for designs that require parallel DDR memory at commercial temperatures.

With nominal 2.5 V operation (2.3–2.7 V range), specified timing windows, and a TSOP package for board-level integration, the device is well suited to engineers looking for a verifiable, standards-based DDR memory component for mid-density applications.

Request a quote or submit a pricing inquiry for the MT46V16M16P-6T:F TR to check availability and lead times.