MT46V16M16P-6T L:F

The MT46V16M16P-6T L:F is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 66-pin TSSOP package. It implements an internal pipelined double-data-rate architecture with source-synchronous DQS and a DLL to support two data transfers per clock cycle.

This device targets board-level DDR memory implementations that require 2.5 V I/O compatibility, a 66‑TSSOP (0.400", 10.16 mm) footprint, and commercial temperature operation from 0°C to 70°C. Key value propositions include DDR throughput at up to 167 MHz, programmable burst lengths, and hardware features for aligned data capture.

Key Features

• Core / Architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization 256 Mbit density configured as 16M × 16 with data mask (DM) and two DQS strobes for x16 (one per byte).
• Performance & Timing Rated for operation at a clock frequency up to 167 MHz (speed grade -6T) with an access window specification and example access metrics including a 700 ps access time and 15 ns write cycle time (word/page).
• Data Integrity & Capture Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DQS edge-aligned for READs and center-aligned for WRITEs. DLL aligns DQ/DQS transitions with CK.
• Interface & I/O Differential clock inputs (CK/CK#) and 2.5 V I/O levels (SSTL_2-compatible) for board-level DDR signaling.
• Programmability & Refresh Programmable burst lengths (BL = 2, 4, 8) with auto-refresh and self-refresh support; 8K refresh cycle count specified.
• Power & Supply Specified supply range VDD/VDDQ = 2.3 V to 2.7 V (commercial grade voltage specification present).
• Package & Temperature 66-pin TSOP (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C. Longer‑lead TSOP option noted for improved reliability (OCPL).

Typical Applications

• Board-level DDR memory implementations — Provides 256 Mbit parallel DDR SDRAM for systems requiring x16 parallel memory in a 66‑pin TSSOP footprint.
• Systems requiring SSTL_2-compatible I/O — 2.5 V I/O signaling supports board designs using SSTL_2 levels and differential clock inputs.
• Designs needing programmable burst access — Programmable burst lengths and four internal banks enable flexible burst-read/write behavior for memory subsystem designs.

Unique Advantages

• Double-data-rate throughput: The internal DDR architecture delivers two data transfers per clock cycle, improving effective bandwidth at a given clock rate.
• Source-synchronous data capture: Bidirectional DQS with DLL alignment facilitates reliable edge-aligned READ capture and center-aligned WRITE timing.
• Compact TSOP footprint: 66-pin TSSOP package (0.400" / 10.16 mm) allows integration into board designs constrained to TSOP footprints.
• Flexible timing and burst control: Programmable burst lengths (2/4/8) and four internal banks support varied access patterns and burst transactions.
• Commercial temperature and standard supply: Operates across 0°C to 70°C with a 2.3 V–2.7 V supply window suitable for commercial-grade applications.

Why Choose MT46V16M16P-6T L:F?

The MT46V16M16P-6T L:F combines a 256 Mbit x16 memory organization with DDR architecture and source-synchronous DQS to provide a practical parallel DDR SDRAM option in a 66‑pin TSOP package. Its timing features, programmable burst lengths, and DLL-aligned data capture make it suitable for board-level memory expansions that require predictable DDR behavior at up to 167 MHz.

Backed by Micron Technology Inc. datasheet specifications, this device is appropriate for commercial-temperature designs that need a 2.5 V I/O, differential clock interface, and standard DDR features such as auto-refresh and self-refresh options.

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