MT46V16M16P-6T IT:F TR

The MT46V16M16P-6T IT:F TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It implements a double-data-rate architecture with internal DLL and source-synchronous data strobe (DQS) to support two data transfers per clock cycle.

Designed for applications requiring a compact 66‑TSSOP footprint and industrial temperature operation, this device provides selectable timing and DDR features such as programmable burst lengths, differential clock inputs, and standard 2.5 V I/O signaling.

Key Features

• Memory Organization  256 Mbit organized as 16M × 16 with four internal banks, supporting burst lengths of 2, 4, or 8 for flexible access patterns.
• DDR Architecture  Double-data-rate (DDR) SDRAM with internal pipelined DDR operation enabling two data accesses per clock cycle and a DLL to align DQ/DQS with CK.
• Data Strobe and Masking  Bidirectional data strobe (DQS) transmitted/received with data; x16 devices provide two DQS signals (one per byte). Data mask (DM) present for masking write data.
• Clocking and Timing  Differential clock inputs (CK, CK#) with timing grade -6T supporting clock rates up to 167 MHz (as specified) and an access window and data-out windows defined in the device timing tables.
• Power and I/O  VDD/VDDQ operating range: 2.3 V to 2.7 V with 2.5 V I/O (SSTL_2-compatible) signaling.
• Refresh and Reliability  Supports auto refresh (8192 cycles) and refresh timing options as defined in the product datasheet; self-refresh options are documented in the family datasheet.
• Package  66‑TSSOP (0.400", 10.16 mm width) plastic package for compact board-level integration and improved lead length reliability options.
• Operating Range  Industrial temperature rating: –40°C to +85°C (TA) as indicated by the IT temperature code.

Typical Applications

• Industrial control systems  Memory buffering and working storage in equipment requiring industrial temperature operation (–40°C to +85°C).
• Embedded systems with parallel DDR interfaces  On‑board DDR memory for designs using parallel SDRAM interfaces and SSTL_2-compatible I/O signaling.
• Compact board-level implementations  Space-constrained designs that benefit from the 66‑TSSOP package and parallel x16 memory organization.

Unique Advantages

• Double-data-rate transfer:  Two data transfers per clock cycle increase effective bandwidth without changing base clock rate.
• Source-synchronous capture (DQS):  Bidirectional DQS (two per x16 device) and DLL alignment simplify reliable timing capture at DDR speeds.
• Flexible timing options:  Timing grade -6T supports 133/167 MHz operation and is documented with precise data-out and access windows for deterministic system timing.
• SSTL_2-compatible I/O:  2.5 V I/O support facilitates interfacing with standard SSTL_2 memory controller implementations.
• Industrial temperature rating:  –40°C to +85°C operation supports deployments in temperature-challenging environments.
• Compact 66‑TSSOP package:  Small-footprint TSOP package (10.16 mm width) enables board-level density while preserving lead length options for reliability.

Why Choose IC DRAM 256MBIT PAR 66TSOP?

The MT46V16M16P-6T IT:F TR positions itself as a practical DDR SDRAM option where a 256 Mbit x16 parallel DDR device is required with industrial temperature capability and compact TSOP packaging. Its DDR architecture, DQS-driven source-synchronous capture, and documented timing grades provide predictable timing behavior for embedded and control applications.

This device is suited to designs that need a balance of density, standard 2.5 V SSTL_2 I/O compatibility, and board-level compactness while operating across an extended temperature range. The family-level features documented in the datasheet (DLL, programmable burst lengths, differential clocking, auto-refresh) support integration into systems that require defined DDR timing and refresh behavior.

Request a quote or contact sales to check availability, lead times, and to discuss how the MT46V16M16P-6T IT:F TR fits into your memory subsystem requirements.