MT46V16M16P-6T:F

The MT46V16M16P-6T:F is a 256 Mbit parallel DDR SDRAM organized as 16M × 16 with four internal banks, provided in a 66-pin TSSOP (66-TSSOP) package. It implements a double-data-rate architecture with source-synchronous data capture and is intended for systems requiring a compact parallel DDR memory solution.

The device operates from a 2.3 V to 2.7 V supply, supports a 167 MHz clock rate for the -6T timing grade, and is specified for commercial temperature operation (0°C to +70°C), offering programmable burst lengths, auto-refresh capability, and TSOP packaging optimized for board-level reliability.

Key Features

• Core Architecture Double Data Rate (DDR) SDRAM with an internal pipelined DDR architecture enabling two data accesses per clock cycle. Differential clock inputs (CK/CK#) and an internal DLL align DQ/DQS transitions with CK.
• Memory Density & Organization 256 Mbit total capacity arranged as 16M × 16 with four internal banks for concurrent operation.
• Performance & Timing Rated clock frequency: 167 MHz for the -6T speed grade; documented data-out window and DQS/DQ skew characteristics for reliable timing margins. Listed access time: 700 ps and write cycle time (word/page): 15 ns.
• Interface & I/O Parallel memory interface with bidirectional data strobe (DQS). x16 configuration includes two DQS signals and two data mask (DM) signals (one per byte). I/O is 2.5 V (SSTL_2-compatible).
• Power & Supply Supply voltage range: 2.3 V to 2.7 V (VDD / VDDQ operating range documented in datasheet).
• Memory Controls Programmable burst lengths of 2, 4, or 8; auto-refresh support with 8K refresh cycles; self-refresh options noted in the datasheet.
• Package & Temperature 66-TSSOP (0.400", 10.16 mm width) plastic TSOP package with longer-lead option (OCPL) for improved reliability. Commercial operating temperature: 0°C to +70°C (TA).

Typical Applications

• Embedded memory subsystems — Compact board-level DDR memory for systems that require a 256 Mbit parallel DDR device in a 66-pin TSOP footprint.
• SSTL_2-compatible interfaces — Use in designs that rely on 2.5 V SSTL_2 signaling for memory I/O.
• Legacy or OEM board replacements — Direct-replacement candidate for assemblies designed around 66-pin TSOP DDR SDRAM devices.

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle increase effective data bandwidth without raising clock frequency.
• Byte-level strobes and masking (x16): Two DQS and two DM signals provide source-synchronous capture and per-byte write masking for tighter data control.
• Flexible burst and refresh control: Programmable burst lengths and auto-refresh with standard 8K cycle refresh simplify memory management.
• Board-level reliability: Longer-lead TSOP option (OCPL) is provided for improved reliability in the 66-TSSOP package.
• Commercial temperature rating: Specified for 0°C to +70°C operation for standard commercial applications.
• Wide supply tolerance: 2.3 V to 2.7 V operating window accommodates typical DDR supply variations.

Why Choose MT46V16M16P-6T:F?

The MT46V16M16P-6T:F delivers a compact, parallel DDR SDRAM option with well-documented timing and control features suitable for commercial embedded designs. Its 16M × 16 organization, DDR architecture, and byte-level DQS/DM signals provide designers with precise timing control and flexible data handling in a 66-TSSOP package optimized for board-level reliability.

This device is appropriate for projects requiring a 256 Mbit DDR memory in a TSOP footprint, a 2.5 V SSTL_2-compatible I/O interface, and standard commercial temperature operation. The combination of programmable burst lengths, auto-refresh support, and Micron’s documented timing parameters supports consistent integration into existing memory subsystems.

If you would like a quote or need further procurement information for the MT46V16M16P-6T:F, please submit a request to sales or request a formal quote through your usual procurement channels.