MT46V16M16P-6T:K TR
| Part Description |
IC DRAM 256MBIT PAR 66TSOP |
|---|---|
| Quantity | 205 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V16M16P-6T:K TR – IC DRAM 256MBIT PAR 66TSOP
The MT46V16M16P-6T:K TR is a 256 Mbit volatile DDR SDRAM device organized as 16M x 16 with a parallel memory interface. It is supplied in a 66-TSSOP (0.400", 10.16 mm width) package for compact board-level integration.
Key electrical and timing characteristics include a clock frequency of 167 MHz, an access time of 700 ps, a write cycle time (word/page) of 15 ns, and a supply voltage range of 2.3 V to 2.7 V. The device is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Core 256 Mbit DRAM organized as 16M x 16, providing a defined density and data width for parallel DDR applications.
- Technology SDRAM - DDR architecture delivering synchronous DDR operation at the specified clock frequency.
- Performance Clock frequency: 167 MHz; access time: 700 ps; write cycle time (word/page): 15 ns—timing metrics provided for design timing analysis.
- Interface Parallel memory interface suitable for systems expecting a parallel DDR memory device.
- Power Voltage supply range: 2.3 V to 2.7 V, matching low-voltage DDR operating requirements.
- Package 66-TSSOP (0.400", 10.16 mm width) supplier device package (66-TSOP) for space-constrained PCB layouts.
- Operating Range Ambient operating temperature specified from 0°C to 70°C (TA) for commercial-temperature applications.
Unique Advantages
- Defined density and data width: 256 Mbit organized as 16M x 16 provides a clear memory capacity and bus width for system design and memory map planning.
- Documented timing specifications: 167 MHz clock, 700 ps access time, and 15 ns write cycle time offer deterministic parameters for timing closure and verification.
- Low-voltage DDR operation: 2.3 V–2.7 V supply range aligns with low-voltage DDR design requirements and helps ensure compatibility with similar low-voltage domains.
- Compact package: 66-TSSOP (0.400", 10.16 mm) package supports space-efficient PCB layouts while retaining established package dimensions.
- Commercial temperature rating: Specified 0°C–70°C operating range for standard commercial applications.
- Manufacturer identification: Produced by Micron Technology Inc., with clear product and package specifications for procurement and BOM documentation.
Why Choose IC DRAM 256MBIT PAR 66TSOP?
The MT46V16M16P-6T:K TR offers a straightforward DDR SDRAM option when a 256 Mbit, 16M x 16 parallel memory device in a 66-TSSOP package is required. Its documented clock, access, and write-cycle timings, together with a defined supply voltage range and operating temperature, provide the electrical and timing clarity needed for system integration and validation.
Manufactured by Micron Technology Inc., this device is suitable for designs that require a clearly specified parallel DDR memory component with compact packaging and commercial temperature operation.
Request a quote or submit a product inquiry to discuss availability and pricing for the MT46V16M16P-6T:K TR.
