MT46V16M16TG-5B:F TR

The MT46V16M16TG-5B:F TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements a double-data-rate architecture with source‑synchronous data capture and is designed for commercial operating temperatures (0°C to 70°C).

Targeted at designers needing compact, synchronous DRAM memory, the device delivers DDR transfers at a 200 MHz clock rate (–5B timing) with a 2.5 V nominal supply window, offering a balanced combination of bandwidth, density, and a small footprint for embedded and system memory applications.

Key Features

• Core / Memory Architecture DDR SDRAM architecture with internal pipelined DDR operation and four internal banks for concurrent accesses; memory organized as 16M × 16 (256 Mbit total).
• Data I/O and Capture Source‑synchronous data capture with bidirectional DQS transmitted/received with data; x16 devices include two DQS signals (one per byte) and two DM signals for write masking.
• Clock and Timing Differential clock inputs (CK / CK#) and DLL for aligning DQ/DQS to CK; –5B speed grade supports 200 MHz clock rate with CL = 3 and specified 700 ps access time.
• Burst and Refresh Programmable burst lengths (2, 4, 8) and auto‑refresh support; commercial refresh interval specified as 64 ms with 8192 refresh cycles.
• Voltage and I/O Standards VDD = +2.5 V ±0.2 V and VDDQ = +2.5 V ±0.2 V; 2.5 V I/O (SSTL_2‑compatible).
• Package 66‑TSSOP (0.400", 10.16 mm width) plastic package for compact board-level integration.
• Operating Range Commercial temperature rating: 0°C to +70°C (TA).

Typical Applications

• Embedded System Memory Provides 256 Mbit of DDR SDRAM capacity in a compact 66‑TSSOP footprint for use as system memory in commercial embedded designs.
• Consumer Electronics Suitable for devices requiring parallel DDR memory with source‑synchronous DQS for predictable data timing and burst transfers.
• Industrial Control Offers DDR bandwidth and 2.5 V I/O compatibility for commercial industrial equipment operating within 0°C to 70°C.

Unique Advantages

• DDR double‑data‑rate transfers: Two data accesses per clock cycle increase effective bandwidth at the specified 200 MHz clock rate (–5B timing).
• Byte‑level source‑synchronous capture: Bidirectional DQS with two strobes on x16 devices enables precise timing alignment for each byte of data.
• SSTL_2‑compatible 2.5 V I/O: Standard 2.5 V supply and I/O levels simplify interfacing with systems designed for SSTL_2 signaling.
• Compact TSOP package: 66‑TSSOP package provides higher density board integration while keeping a standard TSOP footprint (10.16 mm width).
• Flexible burst and refresh controls: Programmable burst lengths (2/4/8) and built‑in auto‑refresh (8192 cycles) support a range of memory access patterns and system refresh requirements.

Why Choose MT46V16M16TG-5B:F TR?

The MT46V16M16TG-5B:F TR is positioned for designs that require a 256 Mbit DDR SDRAM with a parallel x16 interface, commercial temperature rating, and a compact 66‑TSSOP package. Its DDR architecture, differential clocking, and byte‑level DQS support provide reliable timing and bandwidth for embedded and system memory tasks.

With a 2.5 V supply specification and programmable burst/refresh features, this device suits engineers seeking a verifiable, compact DDR memory option for commercial applications where a 200 MHz DDR clock and standard SSTL_2 I/O are required.

Request a quote or submit a pricing inquiry to obtain availability and lead‑time information for the MT46V16M16TG-5B:F TR.