MT46V16M16TG-6T IT:F TR

The MT46V16M16TG-6T IT:F TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements Double Data Rate (DDR) architecture with source‑synchronous data capture and a DLL to align data and strobe signals.

Designed for systems requiring a 16‑bit parallel DDR memory block, this industrial‑temperature device delivers 167 MHz clock operation (DDR), low‑voltage operation and on‑chip features such as programmable burst lengths and internal auto‑refresh to support typical synchronous DRAM use cases.

Key Features

• Core / Architecture Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture enabling two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization 256 Mbit capacity arranged as 16M × 16 with data mask (DM) and two DQS strobes for x16 configuration (one per byte).
• Performance / Timing Rated for 167 MHz clock frequency (DDR), typical access window and a specified access time of 700 ps; write cycle (word page) time of 15 ns. Timing grades include the -6T speed grade referenced in the device marking.
• Interface Parallel DDR interface with differential clock inputs (CK, CK#) and source‑synchronous DQS signals; commands are entered on positive CK edges. Programmable burst lengths: 2, 4, or 8.
• Power Operates from VDD/VDDQ in the 2.3 V to 2.7 V range (nominal 2.5 V ± tolerance specified in datasheet) with SSTL_2‑compatible I/O levels noted in device documentation.
• Refresh and Self‑Maintenance Supports auto refresh (8192 cycles per 64 ms for commercial/industrial timing) and has self‑refresh options documented in the datasheet (self‑refresh availability varies by device option).
• Package and Temperature 66‑pin TSSOP (0.400", 10.16 mm width) package; industrial temperature rating of –40°C to +85°C (TA) for the IT option in the part number.

Typical Applications

• Parallel DDR memory expansion — Drop‑in 16‑bit DDR memory for systems that require a 256 Mbit external DRAM block with source‑synchronous DQS and differential clocking.
• Buffer and frame storage — Use where pipelined DDR transfers and programmable burst lengths (2/4/8) are needed for burst data handling or buffering.
• Embedded system memory — Suitable for embedded designs requiring a low‑voltage (≈2.5 V) parallel DDR SDRAM in a compact 66‑TSSOP footprint.

Unique Advantages

• DDR source‑synchronous capture: Two DQS strobes (x16) and DLL alignment improve timing capture between DQ and clock domains as specified in the datasheet.
• Flexible burst operation: Programmable burst lengths of 2, 4 or 8 allow tuning transfers to match system bus patterns and reduce command overhead.
• Industrial temperature rating: Specified operation from –40°C to +85°C (TA) for the IT option, enabling use in temperature‑constrained environments.
• Compact TSOP package: 66‑TSSOP (0.400", 10.16 mm) provides a narrow footprint for space‑constrained board layouts.
• SSTL_2 compatible I/O levels: Nominal 2.5 V I/O signaling supports common DDR interface voltage conventions documented in the datasheet.

Why Choose MT46V16M16TG-6T IT:F TR?

The MT46V16M16TG-6T IT:F TR offers a 256 Mbit, x16 DDR SDRAM building block with source‑synchronous DQS, differential clock inputs and on‑chip DLL alignment, making it suitable for designs that require deterministic DDR timing and compact packaging. Its industrial temperature rating and TSSOP footprint make it appropriate for embedded platforms where board space and temperature range are constraints.

With programmable burst lengths, auto‑refresh support and standard DDR timing grades documented in the datasheet, this device provides a verifiable, specification‑driven memory option for designers seeking a parallel DDR SDRAM solution in a 66‑pin TSOP package.

If you need pricing, availability or to submit a request for a quote for the MT46V16M16TG-6T IT:F TR, please request a quote or submit an inquiry for sales assistance.