MT46V16M16TG-6T:F TR

The MT46V16M16TG-6T:F TR is a 256 Mbit DDR SDRAM device organized as 16M × 16 with four internal banks and a parallel memory interface. It implements a pipelined double-data-rate architecture with source-synchronous data strobes and differential clock inputs for synchronous high-speed memory operation.

Designed for board-level memory subsystems in commercial-temperature applications, this device delivers DDR performance at a nominal clock rate up to 167 MHz, low-voltage operation (2.3 V–2.7 V), and a compact 66‑TSSOP footprint for integration into space-constrained PCBs.

Key Features

• Core Architecture — Double Data Rate (DDR) SDRAM Internal, pipelined DDR architecture provides two data accesses per clock cycle for increased throughput.
• Memory Organization and Capacity 256 Mbit capacity organized as 16M × 16 with four internal banks to support concurrent operations.
• Performance and Timing Clock frequency up to 167 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns; speed grade -6T timing options are supported.
• Interfaces and Signal Support Parallel memory interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data, and data mask (DM). The x16 device provides two DQS and two DM signals (one per byte).
• Power and I/O Levels Supply voltage range 2.3 V–2.7 V. Datasheet specifies VDD ≈ 2.5 V and 2.5 V I/O (SSTL_2-compatible).
• Burst and Refresh Programmable burst lengths of 2, 4, or 8, with auto-refresh operation (8192-cycle refresh interval as specified for commercial devices).
• Package and Temperature Range 66‑TSSOP (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C. Longer‑lead TSOP (OCPL) option noted for improved reliability.

Typical Applications

• Memory subsystems — Provides 256 Mb DDR SDRAM capacity in a 16M × 16 organization for board-level parallel memory designs.
• High-speed data buffering — DDR architecture and programmable burst lengths support efficient read/write buffering and burst transfers.
• Compact board integration — 66‑TSSOP footprint and low-voltage operation (2.3 V–2.7 V) fit compact commercial PCB layouts requiring SSTL_2-compatible I/O.

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle increase effective bandwidth without raising clock frequency.
• Source-synchronous capture with DQS: Bidirectional DQS (two per x16) enables reliable alignment of data at the receiving end for both READ and WRITE operations.
• Byte-level masking and control: Dual data mask (DM) on x16 devices allows selective byte masking during writes for greater control over memory updates.
• Flexible performance tuning: Programmable burst lengths (2, 4, 8) and defined timing grade (-6T) let designers balance latency and throughput to match system requirements.
• Board-friendly package and reliability option: 66‑TSSOP (0.400", 10.16 mm) eases placement in constrained layouts; OCPL longer‑lead TSOP option is available for improved reliability.
• Standard DDR signaling levels: 2.3 V–2.7 V supply window with 2.5 V I/O compatibility supports common DDR signaling schemes.

Why Choose IC DRAM 256MBIT PAR 66TSOP?

The MT46V16M16TG-6T:F TR delivers a compact, standard-format DDR SDRAM solution for commercial-temperature board designs that require 256 Mbit of parallel memory in a 16M × 16 organization. Its DDR architecture, source-synchronous DQS, and programmable burst modes make it suitable for systems that need predictable synchronous memory behavior and configurable burst performance.

Manufactured by Micron Technology Inc., this device combines defined timing options, a 66‑TSSOP package for dense PCB integration, and a standard 2.5 V-class I/O environment, providing a practical choice for engineers implementing board-level DDR memory subsystems in commercial applications.

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