MT46V16M16TG-75:F TR

The MT46V16M16TG-75:F TR is a 256 Mbit double-data-rate (DDR) SDRAM organized as 16M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements an internal, pipelined DDR architecture with four internal banks and source-synchronous data strobes to support two data transfers per clock cycle.

This device targets designs that require compact, parallel DDR memory with a 0°C to +70°C operating range and a 2.3 V to 2.7 V supply. Key value comes from DDR throughput, byte-level data strobes for x16 operation, and a longer-lead TSOP package for reliable board mounting.

Key Features

• Core / Architecture Internal pipelined DDR architecture providing two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization & Capacity 256 Mbit capacity organized as 16M × 16 (4M × 16 × 4 banks).
• Performance & Timing Specified clock frequency 133 MHz with an access time of 750 ps and write cycle time (word page) of 15 ns.
• Data Strobes & Masking Bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS signals (one per byte). Data mask (DM) present for write masking.
• Interface & I/O Parallel DDR interface with differential clock inputs (CK/CK#) and 2.5 V I/O compatible with SSTL_2 signalling.
• Power Supply voltage range 2.3 V to 2.7 V (VDD/VDDQ target ~2.5 V).
• Refresh & Maintenance Supports auto refresh and programmable burst lengths (BL = 2, 4, 8); self refresh available per device options in datasheet.
• Package & Temperature 66‑TSSOP (0.400", 10.16 mm width) plastic package; commercial temperature rating 0°C to +70°C.

Typical Applications

• Parallel memory for embedded systems Provides 256 Mbit of DDR SDRAM in a compact 66‑TSSOP package for commercial embedded designs requiring parallel DDR buffers and working memory.
• Consumer and computing modules Suitable where a parallel DDR interface and 133 MHz clocking are required for temporary data storage and buffering.
• Board-level memory expansion Used as on-board DRAM for systems that require x16 parallel memory with byte-level strobes and SSTL_2‑compatible I/O.

Unique Advantages

• DDR throughput Internal double-data-rate operation delivers two data transfers per clock cycle for increased effective bandwidth at 133 MHz operation.
• Byte-level timing control Two DQS signals on the x16 device provide byte-aligned source-synchronous captures and simplify timing closure.
• SSTL_2-compatible I/O 2.5 V I/O signalling supports common SSTL_2 system interfaces without additional level translation.
• Compact, reliable package Longer‑lead 66‑TSSOP package (0.400", 10.16 mm) supports reliable mounting in space-constrained designs.
• Commercial temperature operation Specified for 0°C to +70°C operation, matching many commercial electronics environments.
• Flexible burst and refresh options Programmable burst lengths and auto-refresh support adaptable memory access patterns and system-level refresh management.

Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?

The MT46V16M16TG-75:F TR (IC DRAM 256MBIT PARALLEL 66TSOP) provides a compact, parallel DDR SDRAM solution that combines pipelined DDR architecture, byte-level DQS signalling, and SSTL_2‑compatible I/O in a 66‑TSSOP package. Its specification set — including 256 Mbit capacity, 16M × 16 organization, 133 MHz operation, 750 ps access time, and commercial temperature rating — makes it suitable for commercial embedded and board-level memory applications that require reliable, source-synchronous DDR operation.

Designers looking for a straightforward parallel DDR memory component with clear timing and power specifications will find the MT46V16M16TG-75:F TR aligned with systems that need predictable DDR behavior, byte-granular strobes, and a compact package footprint.

If you need pricing, lead-time information, or to request a quote for the MT46V16M16TG-75:F TR, submit a request for a quote or contact sales for more details.