MT46V16M8TG-6T:D TR

The MT46V16M8TG-6T:D TR is a 128 Mbit DDR SDRAM organized as 16M × 8 with a parallel memory interface in a 66‑TSSOP package. It implements an internal, pipelined double‑data‑rate (DDR) architecture that performs two data accesses per clock cycle.

This device targets designs requiring a compact TSOP footprint, 2.5V I/O signaling, and standard DDR features including source‑synchronous data capture (DQS), differential clock inputs (CK/CK#), DLL alignment, programmable burst lengths, and auto/self refresh. Key electrical and timing data include a clock rate of 167 MHz (speed grade -6T), access timing parameters, and a commercial operating temperature range of 0°C to 70°C.

Key Features

• Core DDR Architecture: Internal pipelined double‑data‑rate (DDR) operation enabling two data transfers per clock cycle and DLL alignment of DQ/DQS with CK.
• Memory Organization: 128 Mbit capacity organized as 16M × 8 with four internal banks for concurrent operation.
• Timing and Performance: Speed grade -6T supports a 167 MHz clock rate; access time and timing characteristics include a 700 ps access time and a 15 ns write cycle time (word/page).
• Interface and Data Integrity: Parallel DDR interface with bidirectional data strobe (DQS), data mask (DM) for write masking, and differential clock inputs (CK and CK#) for source‑synchronous capture.
• Power: Supply voltage range 2.3 V to 2.7 V (VDD/VDDQ nominal 2.5 V), with 2.5 V I/O signaling compatible with SSTL_2.
• Memory Features: Programmable burst lengths (2, 4, or 8), auto refresh and self refresh modes, and concurrent auto precharge option.
• Package and Thermal: 66‑TSSOP (0.400", 10.16 mm width) package with longer lead TSOP option for improved reliability (OCPL); commercial temperature rating 0°C to 70°C.

Typical Applications

• Systems requiring parallel DDR memory: Integration where a 128 Mbit, 16M × 8 DDR SDRAM in a 66‑TSSOP footprint is required for volatile storage.
• Compact module and board designs: Where a TSOP‑packaged DDR device with 2.5 V I/O and source‑synchronous DQS timing is needed.
• Designs using standard DDR features: Applications that rely on programmable burst lengths, auto/self refresh, and multi‑bank concurrency.

Unique Advantages

• Established DDR feature set: Includes DQS, differential CK/CK#, DLL, and programmable burst lengths for standard DDR timing and data capture.
• Compact TSOP package: 66‑TSSOP (0.400", 10.16 mm) offers a small footprint with longer lead option for improved reliability (OCPL).
• Commercial temperature rating: Rated for 0°C to 70°C to match typical commercial deployment environments.
• Flexible timing options: Speed grade -6T supports 167 MHz operation with documented data‑out and access windows for system timing design.
• Standard 2.5 V I/O compatibility: VDD/VDDQ nominal around 2.5 V and SSTL_2 I/O compatibility for common DDR signaling domains.

Why Choose MT46V16M8TG-6T:D TR?

The MT46V16M8TG-6T:D TR delivers a straightforward 128 Mbit DDR SDRAM building block—16M × 8 organization, four internal banks, and a compact 66‑TSSOP package—suitable for designs that require a parallel DDR memory device with standard DDR features. Its documented timing (speed grade -6T at 167 MHz), DLL alignment, and source‑synchronous DQS behavior provide clear timing parameters for integration.

Manufactured by Micron Technology, Inc. and part of the 128Mb DDR SDRAM family, this device is appropriate for commercial‑temperature designs that need a proven DDR memory element in a TSOP form factor, backed by detailed datasheet specifications for electrical, timing, and package characteristics.

Request a quote or submit a parts inquiry for the MT46V16M8TG-6T:D TR to obtain pricing and availability information for your next design.