MT46V32M16BN-5B L IT:F

The MT46V32M16BN-5B L IT:F is a 512 Mb (32M x 16) Double Data Rate (DDR) SDRAM device in a 60-ball FBGA package. It provides source-synchronous, pipelined DDR architecture with a parallel memory interface and on-die features for synchronous read/write operation.

This device addresses applications that require volatile high-speed DDR memory with a 200 MHz clock capability and extended operating temperature range, offering a compact package and standard 2.5 V I/O voltage range for system integration.

Key Features

• Core / Memory Architecture 512 Mb DDR SDRAM organized as 32M × 16 with four internal banks and programmable burst lengths (2, 4 or 8).
• Performance & Timing Supports DDR operation with a 200 MHz clock rate (speed grade –5B) and an access time of 700 ps; timing optimized with DLL for DQ/DQS alignment and DQS center/edge align modes for write/read.
• Data I/O and Strobes Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture; x16 devices include two DQS signals and two data mask (DM) pins (one per byte).
• Power VDD/VDDQ supply range specified at 2.5 V ±0.2 V (also noted 2.6 V ±0.1 V for DDR400 conditions); I/O signaling compatible with SSTL_2.
• Refresh and Bank Management Supports auto refresh with 8K refresh count and concurrent auto precharge option for efficient memory maintenance.
• Package & Mounting 60‑ball FBGA (10 mm × 12.5 mm) package designed for board-level mounting; supplier package reference 60‑TFBGA/60‑FBGA.
• Temperature & Reliability Industrial operating temperature range of −40°C to +85°C (TA).
• Other System Features Differential clock inputs (CK/CK#), command input on positive CK edge, and support for write masking and RAS lockout options as documented in the datasheet.

Typical Applications

• Embedded memory in electronic systems: Use as parallel DDR SDRAM storage where a 512 Mb volatile memory resource is required.
• Industrial equipment: Suited for systems that require operation across an industrial temperature range (−40°C to +85°C).
• Board‑level DDR memory implementations: Compact 60‑FBGA package provides a small footprint solution for dense PCB designs needing DDR memory.

Unique Advantages

• DDR source‑synchronous data capture: Bidirectional DQS with DLL alignment improves read/write data timing control for source‑synchronous interfaces.
• Compact FBGA package: 60-ball FBGA (10 mm × 12.5 mm) reduces board area while providing standard ballout for assembly.
• Industrial temperature rating: −40°C to +85°C operating range supports deployment in temperature‑challenging environments.
• SSTL_2 compatible I/O: 2.5 V I/O voltage (VDD/VDDQ) aligns with common SSTL_2 signaling requirements for parallel DDR interfaces.
• Flexible burst and bank operation: Programmable burst lengths and four internal banks enable flexible data access patterns and concurrent operations.
• Standardized timing grades: Available timing grade (–5B) specifying 5 ns cycle time with documented timing windows and skew tolerances.

Why Choose MT46V32M16BN-5B L IT:F?

The MT46V32M16BN-5B L IT:F is positioned as a compact, industrial‑temperature DDR SDRAM option for designs requiring a 512 Mb parallel memory device with standardized 2.5 V I/O and source‑synchronous DQS support. Its combination of programmable burst lengths, four internal banks, and DLL‑based timing alignment makes it suitable for systems that need predictable DDR timing behavior in a small FBGA footprint.

Engineers designing board‑level DDR memory subsystems and embedded systems can rely on the documented electrical, timing, and package specifications to assess integration, thermal margins, and timing closure during development.

Please request a quote or submit a sales inquiry to obtain pricing, availability, and ordering information for the MT46V32M16BN-5B L IT:F.