MT46V32M16BN-5B IT:F

The MT46V32M16BN-5B IT:F is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements a Double Data Rate (DDR) architecture with internal DLL, differential clock inputs and source‑synchronous DQS for high‑speed data transfer.

This device targets designs that require compact, industrial‑temperature DDR memory for temporary data storage and high‑throughput buffering, offering specified clock performance, programmable burst lengths and standard 2.5 V I/O levels.

Key Features

• Core / Architecture  Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture and a DLL to align DQ/DQS transitions with CK; supports two data accesses per clock cycle.
• Memory Organization & Capacity  512 Mbit device organized as 32M × 16 with four internal banks (8 Meg × 16 × 4 banks configuration).
• Speed & Timing  -5B speed grade: 5 ns cycle time (CL = 3) supporting up to 200 MHz clock rate; access window and timing details per datasheet (data-out window and DQS‑DQ skew specified).
• Data I/O and Strobes  Bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS and two data masks (DM) — one per byte.
• Clock & Command  Differential clock inputs (CK and CK#) with commands entered on positive CK edge and DQS edge‑alignment center for writes and edge‑aligned for reads.
• Power  Standard VDD/VDDQ = +2.5 V ±0.2 V; DDR400 option supports VDD/VDDQ = +2.6 V ±0.1 V.
• Refresh & Burst  Auto refresh with 8192‑cycle / 64 ms refresh interval and programmable burst lengths of 2, 4, or 8.
• Package  60‑ball FBGA package (10 mm × 12.5 mm) in a compact footprint suitable for board‑level integration.
• Industrial Temperature Range  Specified operating temperature from −40°C to +85°C (TA) for industrial applications.
• Write and Access Characteristics  Write cycle time (word/page) specified at 15 ns and an access time listed as 700 ps in product specifications.

Typical Applications

• Industrial systems  Memory subsystem for industrial equipment that requires DDR SDRAM operating across −40°C to +85°C.
• Compact board‑level memory  60‑ball FBGA (10 mm × 12.5 mm) package for space‑constrained designs needing on‑board DRAM.
• High‑throughput buffering  Temporary data storage and buffering in systems that leverage DDR source‑synchronous DQS and programmable burst lengths for burst transfers.

Unique Advantages

• Double data‑rate transfers: Enables two data accesses per clock cycle via DDR architecture, improving effective throughput without changing clock frequency.
• Industrial temperature rating: −40°C to +85°C operating range supports deployment in industrial environments where extended temperature tolerance is required.
• Standard 2.5 V I/O (SSTL_2 compatible): VDD/VDDQ specifications of +2.5 V ±0.2 V provide compatibility with standard 2.5 V signaling domains.
• Compact FBGA package: 60‑ball FBGA (10 mm × 12.5 mm) offers a small footprint for dense PCBs and board‑level memory integration.
• Flexible timing and refresh: Programmable burst lengths, auto refresh (8192 cycles / 64 ms) and defined speed grades (e.g., -5B) allow designers to balance latency and throughput.
• Byte‑level control: Data mask (DM) and dual DQS on x16 enable byte‑level write masking and robust source‑synchronous data capture.

Why Choose MT46V32M16BN-5B IT:F?

The MT46V32M16BN-5B IT:F delivers a verified 512 Mbit DDR SDRAM solution with industry‑grade temperature range, defined timing grades and compact FBGA packaging. Its DDR architecture, differential clocking and DQS‑based source‑synchronous capture provide deterministic timing behavior required for high‑speed parallel memory designs.

This device is suited to designs that need a reliable, board‑level DDR memory component with clear electrical and timing specifications (VDD/VDDQ, clock rates, access/write timings) and industrial temperature capability. Detailed datasheet timing and configuration information support predictable integration and long‑term deployment in industrial and compact system designs.

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