MT46V32M16BN-5B:C TR

The MT46V32M16BN-5B:C TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It provides synchronous double-data-rate operation at a clock frequency of 200 MHz and is supplied in a 60-FBGA (10 × 12.5 mm) package.

This device is suitable for designs that require a compact, mid-density volatile DRAM solution with defined timing characteristics and a 2.5 V–2.7 V supply range. Typical use cases include systems that integrate parallel DDR memory for temporary data storage and buffering.

Key Features

• Memory Architecture Organized as 32M × 16, delivering a total memory size of 512 Mbit in a parallel DRAM format.
• DDR SDRAM Technology Synchronous DDR architecture with a clock frequency of 200 MHz to support double-data-rate transfers.
• Timing and Performance Specified access time of 700 ps and a write cycle time (word page) of 15 ns for predictable timing behavior.
• Power Operates from a 2.5 V to 2.7 V supply range, matching designs with standard DDR voltage rails.
• Package Supplied in a 60-TFBGA / 60-FBGA package (10 × 12.5 mm) for compact board mounting.
• Operating Temperature Rated for operation from 0°C to 70°C (TA), suitable for typical commercial temperature environments.

Typical Applications

• Embedded systems requiring parallel DDR memory — Provides 512 Mbit of volatile storage in a compact 60-FBGA package for temporary data buffering and program working memory.
• Communications and networking equipment — Parallel DDR interface and 200 MHz clocking support buffering and packet processing where mid-density DRAM is needed.
• Consumer and industrial electronics — Compact footprint and standard commercial temperature rating allow integration into space-constrained boards with defined environmental ranges.

Unique Advantages

• Mid-density capacity: 512 Mbit (32M × 16) provides a balance between memory size and board area for designs that do not require high-density DRAM.
• DDR interface at 200 MHz: Double-data-rate operation enables higher effective data throughput compared with single-rate synchronous DRAM at the same clock.
• Deterministic timing: 700 ps access time and 15 ns write cycle time give clear timing parameters for system-level memory design and validation.
• Standard DDR voltage range: 2.5 V–2.7 V supply simplifies power-rail design in systems using standard DDR voltages.
• Compact BGA package: 60-FBGA (10 × 12.5 mm) minimizes PCB footprint while supporting surface-mount assembly.
• Commercial temperature rating: 0°C–70°C operational range aligns with common commercial product requirements.

Why Choose MT46V32M16BN-5B:C TR?

The MT46V32M16BN-5B:C TR positions itself as a compact, mid-density DDR SDRAM solution offering defined timing (700 ps access time, 15 ns write cycle) and a 200 MHz DDR clock for designs that require predictable volatile memory behavior. Its 2.5 V–2.7 V supply and 60-FBGA package enable straightforward integration into boards with standard DDR power rails and limited board area.

This device is well suited for engineers and procurement teams targeting systems that need reliable, commercial-temperature DDR memory capacity without moving to higher-density or specialty DRAM parts. The clear specification set supports scalable design and system validation in applications that use parallel DDR memory.

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