MT46V32M16BN-6 IT:F

IC DRAM 512MBIT PAR 60FBGA
Part Description

IC DRAM 512MBIT PAR 60FBGA

Quantity 896 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeIndustrial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16BN-6 IT:F – IC DRAM 512MBIT PAR 60FBGA

The MT46V32M16BN-6 IT:F is a 512 Mbit DDR SDRAM device organized as 32M × 16 in a 60-ball FBGA (10 mm × 12.5 mm) package. It implements double-data-rate architecture with internal pipelined operation and four internal banks to support source‑synchronous data capture and high-throughput memory access.

Designed for industrial-temperature operation (−40°C to +85°C) and a 2.3 V to 2.7 V supply range, the device supports a 167 MHz clock rate (DDR), a 700 ps access window, and a 15 ns write cycle time, offering compact, industry‑rated volatile memory for systems requiring parallel DDR SDRAM in a small footprint.

Key Features

  • Core DDR Architecture Internal, pipelined double-data-rate (DDR) design with two data accesses per clock cycle and a DLL to align data and strobe with the clock for reliable timing.
  • Memory Organization 512 Mbit capacity organized as 32M × 16 with four internal banks to enable concurrent bank operations and flexible addressing.
  • Performance & Timing Supports a 167 MHz clock frequency (DDR) with an access time window cited at 700 ps and a write cycle time (word page) of 15 ns; programmable burst lengths of 2, 4, or 8.
  • Data Interface & Strobe Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS signals and two data mask (DM) signals (one per byte).
  • Power & I/O Operates from a 2.3 V to 2.7 V supply; datasheet specifies VDD/VDDQ nominal operation compatible with SSTL_2 I/O signaling.
  • Refresh & Auto Maintenance Auto refresh with 8K refresh cycles; self‑refresh behavior described in the datasheet (note: availability varies by option).
  • Package & Temperature Range 60-ball FBGA package (10 × 12.5 mm) with an industrial ambient operating range of −40°C to +85°C (TA).

Typical Applications

  • Industrial Embedded Systems Compact DDR memory for industrial controllers and instrumentation that require operation across −40°C to +85°C.
  • PC Memory Subsystems Speed‑grade compatibility information in the datasheet identifies alignment with PC memory timing families (e.g., PC3200/PC2700/PC2100 speed grades).
  • Compact Module Designs Small 60-ball FBGA footprint for space‑constrained modules and boards that need 512 Mbit parallel DDR memory.

Unique Advantages

  • Industrial Temperature Rating: Designed for −40°C to +85°C operation to meet harsher ambient requirements without additional thermal qualification.
  • DDR Throughput: Double-data-rate architecture with a 167 MHz clock capability delivers two data transfers per clock for improved bandwidth within the specified timing envelope.
  • Byte-Level Data Control: x16 format provides two DQS and two DM signals (one per byte), enabling byte-granular write masking and aligned data capture.
  • Compact FBGA Packaging: 60-ball (10 × 12.5 mm) FBGA offers a small PCB footprint for dense board-level integration.
  • Flexible Power Window: Operates across a 2.3 V to 2.7 V supply range, accommodating typical 2.5 V DDR power rails and small variations.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16BN-6 IT:F provides industrial-temperature DDR SDRAM performance in a compact 60-ball FBGA package, combining DDR pipelined architecture, byte-level strobe/mask control, and a 512 Mbit density suitable for space-constrained designs. Its documented timing, refresh behavior, and supply range make it appropriate for systems that require verified DDR behavior at up to 167 MHz clocking within the specified electrical and thermal ranges.

This device is well suited to design teams targeting industrial and compact module applications that need a verified parallel DDR memory solution from a recognized memory product family, offering predictable timing characteristics and a small board footprint.

Request a quote or submit a parts inquiry to obtain pricing and availability for the MT46V32M16BN-6 IT:F. Provide your quantity and delivery requirements to receive a formal response.

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