MT46V32M16BN-6:F TR

IC DRAM 512MBIT PAR 60FBGA
Part Description

IC DRAM 512MBIT PAR 60FBGA

Quantity 318 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of MT46V32M16BN-6:F TR – IC DRAM 512MBIT PAR 60FBGA

The MT46V32M16BN-6:F TR is a 512 Mbit DDR SDRAM device from Micron, organized as 32M × 16 with a parallel memory interface. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture to deliver two data accesses per clock cycle.

Designed for systems that require compact 512 Mbit DDR memory in a 60-ball FBGA package, the device balances performance (167 MHz clock grade) and integration with a 10 × 12.5 mm footprint and standard 2.5 V I/O signaling.

Key Features

  • Core Architecture Internal, pipelined DDR SDRAM providing two data accesses per clock cycle, with a DLL to align DQ/DQS transitions with CK.
  • Memory Organization 512 Mbit capacity arranged as 32M × 16 with four internal banks to support concurrent operation.
  • Interface and Timing Parallel DDR interface with differential clock inputs (CK/CK#), bidirectional DQS (x16 devices include two DQS signals, one per byte), and commands registered on positive CK edges.
  • Performance Speed grade supports a 167 MHz clock frequency (DDR333 timing grade), with an example access time of 700 ps and programmable burst lengths of 2, 4, or 8.
  • Power Standard 2.5 V I/O (SSTL_2 compatible); supply range listed as 2.3 V to 2.7 V in device specifications.
  • Refresh and Power Management Auto refresh with commercial specification of 64 ms/8192 cycles and support for self-refresh (self-refresh noted as not available on AT devices in the datasheet).
  • Package 60-ball TFBGA (10 mm × 12.5 mm) package (60-FBGA, Pb-free BN option) for compact board-level integration.
  • Operating Range Commercial temperature rating with an operating ambient of 0°C to +70°C.
  • Write/Access Timing Write cycle time (word page) specified at 15 ns and timing grade -6 compatible with CL = 2.5 operation at 167 MHz.

Typical Applications

  • PC and computing memory subsystems Suitable for designs targeting DDR memory speed grades shown in the datasheet (examples include PC3200/PC2700/PC2100 compatibility listings).
  • Embedded memory subsystems Compact 60-ball FBGA package and 512 Mbit density make it appropriate for board-level integration where a parallel DDR SDRAM is required.
  • SSTL_2-compatible I/O systems 2.5 V I/O signaling supports integration into systems designed around SSTL_2 electrical interfaces.

Unique Advantages

  • DDR performance architecture: Pipelined DDR design with source-synchronous DQS capture delivers two data transfers per clock cycle for increased throughput.
  • Byte-level data strobes and masking: Bidirectional DQS signals and data mask (DM) support (x16 includes two DQS/DM) simplify timing and write masking at the byte level.
  • Flexible burst operation: Programmable burst lengths of 2, 4, or 8 enable tuning for different access patterns and throughput requirements.
  • Compact package footprint: 60-ball FBGA (10 × 12.5 mm) enables high-density board layouts while maintaining standard BGA assembly practices.
  • Commercial grade timing options: -6 timing grade provides 167 MHz operation with well-defined timing windows and access parameters from the datasheet.
  • Standardized I/O signaling: 2.5 V I/O (SSTL_2 compatible) simplifies interface design with common memory controller standards.

Why Choose MT46V32M16BN-6:F TR?

The MT46V32M16BN-6:F TR delivers a compact 512 Mbit DDR SDRAM option with a parallel interface and established DDR features—DLL alignment, bidirectional DQS, programmable burst lengths, and four internal banks—making it suitable for designs that require predictable DDR333-class memory behavior in a 60-ball FBGA footprint. Its 2.5 V I/O and commercial temperature rating (0°C to +70°C) align with standard system memory requirements.

Manufactured by Micron Technology, the device is a straightforward choice for engineers and procurement teams seeking a verified 32M × 16 DDR memory component for board-level integration where the documented timing, voltage, and package specifications meet system needs.

If you would like pricing, lead time, or a formal quote for the MT46V32M16BN-6:F TR, submit a request to sales or request a quote to discuss availability and ordering details.

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