MT46V32M16BN-6:F TR
| Part Description |
IC DRAM 512MBIT PAR 60FBGA |
|---|---|
| Quantity | 318 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT46V32M16BN-6:F TR – IC DRAM 512MBIT PAR 60FBGA
The MT46V32M16BN-6:F TR is a 512 Mbit DDR SDRAM device from Micron, organized as 32M × 16 with a parallel memory interface. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture to deliver two data accesses per clock cycle.
Designed for systems that require compact 512 Mbit DDR memory in a 60-ball FBGA package, the device balances performance (167 MHz clock grade) and integration with a 10 × 12.5 mm footprint and standard 2.5 V I/O signaling.
Key Features
- Core Architecture Internal, pipelined DDR SDRAM providing two data accesses per clock cycle, with a DLL to align DQ/DQS transitions with CK.
- Memory Organization 512 Mbit capacity arranged as 32M × 16 with four internal banks to support concurrent operation.
- Interface and Timing Parallel DDR interface with differential clock inputs (CK/CK#), bidirectional DQS (x16 devices include two DQS signals, one per byte), and commands registered on positive CK edges.
- Performance Speed grade supports a 167 MHz clock frequency (DDR333 timing grade), with an example access time of 700 ps and programmable burst lengths of 2, 4, or 8.
- Power Standard 2.5 V I/O (SSTL_2 compatible); supply range listed as 2.3 V to 2.7 V in device specifications.
- Refresh and Power Management Auto refresh with commercial specification of 64 ms/8192 cycles and support for self-refresh (self-refresh noted as not available on AT devices in the datasheet).
- Package 60-ball TFBGA (10 mm × 12.5 mm) package (60-FBGA, Pb-free BN option) for compact board-level integration.
- Operating Range Commercial temperature rating with an operating ambient of 0°C to +70°C.
- Write/Access Timing Write cycle time (word page) specified at 15 ns and timing grade -6 compatible with CL = 2.5 operation at 167 MHz.
Typical Applications
- PC and computing memory subsystems Suitable for designs targeting DDR memory speed grades shown in the datasheet (examples include PC3200/PC2700/PC2100 compatibility listings).
- Embedded memory subsystems Compact 60-ball FBGA package and 512 Mbit density make it appropriate for board-level integration where a parallel DDR SDRAM is required.
- SSTL_2-compatible I/O systems 2.5 V I/O signaling supports integration into systems designed around SSTL_2 electrical interfaces.
Unique Advantages
- DDR performance architecture: Pipelined DDR design with source-synchronous DQS capture delivers two data transfers per clock cycle for increased throughput.
- Byte-level data strobes and masking: Bidirectional DQS signals and data mask (DM) support (x16 includes two DQS/DM) simplify timing and write masking at the byte level.
- Flexible burst operation: Programmable burst lengths of 2, 4, or 8 enable tuning for different access patterns and throughput requirements.
- Compact package footprint: 60-ball FBGA (10 × 12.5 mm) enables high-density board layouts while maintaining standard BGA assembly practices.
- Commercial grade timing options: -6 timing grade provides 167 MHz operation with well-defined timing windows and access parameters from the datasheet.
- Standardized I/O signaling: 2.5 V I/O (SSTL_2 compatible) simplifies interface design with common memory controller standards.
Why Choose MT46V32M16BN-6:F TR?
The MT46V32M16BN-6:F TR delivers a compact 512 Mbit DDR SDRAM option with a parallel interface and established DDR features—DLL alignment, bidirectional DQS, programmable burst lengths, and four internal banks—making it suitable for designs that require predictable DDR333-class memory behavior in a 60-ball FBGA footprint. Its 2.5 V I/O and commercial temperature rating (0°C to +70°C) align with standard system memory requirements.
Manufactured by Micron Technology, the device is a straightforward choice for engineers and procurement teams seeking a verified 32M × 16 DDR memory component for board-level integration where the documented timing, voltage, and package specifications meet system needs.
If you would like pricing, lead time, or a formal quote for the MT46V32M16BN-6:F TR, submit a request to sales or request a quote to discuss availability and ordering details.