MT46V32M16BN-75 L:C TR

The MT46V32M16BN-75 L:C TR is a 512 Mbit volatile DRAM device implemented as SDRAM – DDR with a parallel memory interface. It is organized as 32M × 16 and operates with a 133 MHz clock, providing a compact memory option in a 60‑TFBGA package.

This device is intended for designs that require parallel DDR memory with defined timing and power characteristics, offering predictable access performance and a small-footprint BGA package for board-level integration.

Key Features

• Memory Type & Architecture SDRAM – DDR architecture with a memory organization of 32M × 16 delivering a total of 512 Mbit of volatile DRAM.
• Performance 133 MHz clock frequency and an access time of 750 ps to support synchronous parallel DDR operation.
• Timing Write cycle time (word/page) specified at 15 ns for predictable write performance.
• Power Supply voltage range of 2.3 V to 2.7 V to match common DDR I/O voltage domains.
• Package 60‑TFBGA package (60‑FBGA, 10 × 12.5 mm footprint) for high-density board mounting.
• Operating Range Specified operating ambient temperature range of 0°C to 70°C (TA).
• Interface Parallel memory interface suitable for systems designed around parallel DDR SDRAM connectivity.

Typical Applications

• Parallel memory subsystems Used as a parallel DDR SDRAM component in memory subsystems requiring a 32M × 16 organization and 512 Mbit capacity.
• Embedded systems Integration where a compact 60‑TFBGA packaged volatile memory with a 133 MHz clock is required.
• Consumer and industrial electronics Designs that require synchronous parallel DRAM with defined access time and write cycle timing within the 0°C to 70°C ambient range.

Unique Advantages

• Compact BGA footprint: 60‑TFBGA (10 × 12.5 mm) package enables high-density board layouts where space is constrained.
• DDR SDRAM architecture: Synchronous DDR operation with a 133 MHz clock and 750 ps access time supports predictable timing for parallel memory designs.
• Clear timing specification: 15 ns write cycle time (word/page) provides deterministic write behavior for system designers.
• Low-voltage operation: 2.3 V to 2.7 V supply range aligns with standard low-voltage DDR domains.
• Industry-standard organization: 32M × 16 memory organization simplifies capacity planning and porting within parallel DDR ecosystems.

Why Choose MT46V32M16BN-75 L:C TR?

The MT46V32M16BN-75 L:C TR combines a straightforward DDR SDRAM architecture with clear electrical and timing specifications, making it suitable for engineers specifying parallel volatile memory with known performance characteristics. Its 512 Mbit capacity in a 32M × 16 organization and 60‑TFBGA package balance density and board-area considerations.

This device fits designs that require synchronous parallel DRAM with defined supply and thermal envelopes (2.3 V–2.7 V, 0°C–70°C). It is appropriate for teams focused on predictable timing, compact packaging, and integration into parallel memory subsystems.

Request a quote or submit an inquiry to discuss availability, lead times, and pricing for the MT46V32M16BN-75 L:C TR. Our team can provide a formal quote and answer technical questions about integrating this DDR SDRAM device into your design.