MT46V32M16BN-75:C TR

The MT46V32M16BN-75:C TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It implements DDR SDRAM technology and targets systems that require volatile, synchronous parallel memory with defined timing and power characteristics.

Key attributes include a 133 MHz clock frequency, 750 ps access time, a 15 ns write cycle time (word page), and operation from a 2.3 V to 2.7 V supply. The device is supplied in a 60-FBGA (10 × 12.5 mm) package and rated for 0°C to 70°C ambient operation.

Key Features

• Memory Core & Technology 512 Mbit DDR SDRAM organized as 32M × 16; volatile memory intended for temporary data storage in synchronous systems.
• Interface & Timing Parallel memory interface with a 133 MHz clock frequency, 750 ps access time and a 15 ns write cycle time (word page) for deterministic timing behavior.
• Power Operates from a 2.3 V to 2.7 V supply range, suitable for designs using a 2.5 V memory domain.
• Package Supplied in a 60-TFBGA / 60-FBGA package (10 × 12.5 mm), providing a compact footprint for board-level integration.
• Operating Range Rated for ambient operation from 0°C to 70°C (TA), appropriate for commercial-temperature applications.

Typical Applications

• Embedded Systems — Use as parallel DDR volatile memory for temporary data storage or buffering in embedded platforms that support 32M × 16 memory organization.
• Networking and Communications — Suitable for packet buffering or transient data storage in networking equipment designed around a parallel DDR memory interface.
• Consumer Electronics — Provides on-board DRAM capacity in consumer devices requiring a 512 Mbit DDR memory in a compact FBGA package.
• Video and Graphics Buffers — Applicable where parallel DRAM is used for frame buffering or intermediate data storage in systems compatible with the specified timing and electrical characteristics.

Unique Advantages

• Defined DDR SDRAM Architecture — 32M × 16 organization and DDR technology provide a clear mapping for system memory design.
• Compact FBGA Packaging — 60-FBGA (10 × 12.5 mm) package reduces board space while enabling solder-down mounting for compact systems.
• Timing Suitability — 133 MHz clock frequency, 750 ps access time, and 15 ns write cycle time support designs with specific synchronous timing requirements.
• 2.3–2.7 V Supply Compatibility — Operates across a 2.3 V to 2.7 V range, aligning with 2.5 V memory power domains.
• Commercial Temperature Rating — 0°C to 70°C ambient operation for applications specified to commercial temperature ranges.
• Proven Manufacturer — Manufactured by Micron Technology Inc., providing a recognizable source for the device.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16BN-75:C TR is positioned for designs that require a 512 Mbit parallel DDR SDRAM in a space-efficient FBGA package with defined timing and voltage characteristics. Its 32M × 16 organization, 133 MHz clock frequency, and commercial temperature rating make it suitable for equipment and devices designed around a 2.5 V memory domain and synchronous parallel memory interfaces.

Choose this device when you need straightforward integration of DDR SDRAM capacity from a recognized manufacturer, with clear electrical and timing specifications to support predictable system memory behavior and board-level footprint constraints.

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