MT46V32M16BN-75:C

The MT46V32M16BN-75:C is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization. It offers a parallel memory interface in a compact 60-TFBGA / 60-FBGA (10×12.5) package.

Designed for systems that require 512 Mbit of parallel DDR SDRAM, the device delivers defined timing and power characteristics—including a 133 MHz clock frequency, 750 ps access time and a 2.3–2.7 V supply range—while fitting board-level designs with restricted footprint and commercial temperature operation.

Key Features

• Memory Core 512 Mbit DRAM organized as 32M × 16, provided as volatile memory suitable for temporary data storage.
• DDR SDRAM Technology Double data rate SDRAM architecture with a specified clock frequency of 133 MHz for synchronous parallel operation.
• Performance 750 ps access time and a write cycle time (word page) of 15 ns, delivering deterministic timing for system memory operations.
• Power Operates from a 2.3 V to 2.7 V supply range to match designs targeting this voltage envelope.
• Interface Parallel memory interface suitable for board-level integration where parallel DDR connectivity is required.
• Package Available in a 60-TFBGA / 60-FBGA package with a supplier device package dimension of 10 × 12.5 mm, enabling compact board footprint.
• Temperature Range Specified for commercial operation from 0°C to 70°C (TA).

Typical Applications

• System Memory Modules For designs requiring 512 Mbit of parallel DDR SDRAM in a compact FBGA package for board-level memory implementations.
• Embedded Memory For embedded designs that need a 32M × 16 DRAM device with a 133 MHz clock and defined access timing.
• Board-Level Memory Expansion Where a 60-FBGA (10×12.5) footprint and 2.3–2.7 V operation align with the host board's mechanical and electrical constraints.

Unique Advantages

• Defined DDR Performance: 133 MHz clock frequency and 750 ps access time provide predictable timing for memory subsystems.
• Compact FBGA Package: 60-TFBGA / 60-FBGA (10×12.5) package minimizes PCB area for space-constrained designs.
• Straightforward Parallel Interface: Parallel DDR interface eases integration into systems designed for synchronous parallel memory.
• Commercial Temperature Rating: 0°C to 70°C operating range supports typical commercial-environment applications.
• Standard Voltage Envelope: 2.3–2.7 V supply range aligns with designs using similar DDR memory power rails.

Why Choose MT46V32M16BN-75:C?

The MT46V32M16BN-75:C provides a focused solution for designs that require 512 Mbit of parallel DDR SDRAM with clearly specified timing, power and package characteristics. Its combination of DDR SDRAM architecture, 32M × 16 organization and a compact 60-FBGA footprint supports board-level memory implementations where space and defined performance matter.

This device is suited to developers and procurement teams specifying a commercial-temperature, 512 Mbit parallel DRAM operating at a 2.3–2.7 V supply and 133 MHz clock, offering predictable timing and a small package for streamlined integration.

Request a quote or submit a purchase inquiry to obtain pricing and availability for the MT46V32M16BN-75:C.