MT46V32M16BN-75 L:C

The MT46V32M16BN-75 L:C is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60-TFBGA package. It is a volatile DRAM device designed to provide board-level parallel memory capacity with defined timing and electrical characteristics.

Key characteristics include a 133 MHz clock frequency, 750 ps access time, a write cycle time (word page) of 15 ns, and a supply voltage range of 2.3 V to 2.7 V, making it suitable for designs that require compact, mid-density parallel DDR memory in a small FBGA footprint.

Key Features

• Memory Core 512 Mbit capacity organized as 32M × 16, delivering a mid-density DRAM option for board-level memory needs.
• Technology DDR SDRAM architecture with a parallel memory interface for standard parallel DRAM integration.
• Performance 133 MHz clock frequency and 750 ps access time provide the device timing characteristics for synchronous DDR operation; write cycle time (word page) is 15 ns.
• Power Supply voltage range of 2.3 V to 2.7 V for device operation.
• Package 60-TFBGA / 60-FBGA (10 × 12.5 mm) compact ball-grid array package for high-density board mounting.
• Operating Range Specified operating ambient temperature range of 0°C to 70°C (TA).
• Manufacturer Produced by Micron Technology Inc., providing a known supply source for component procurement.

Typical Applications

• Parallel DRAM memory expansion Use where a 512 Mbit parallel DDR SDRAM is required to expand system memory capacity on a board.
• Compact board-level modules The 60-FBGA package supports compact, space-constrained layouts that need mid-density DRAM.
• Low-voltage system designs Suitable for systems designed to operate within a 2.3 V to 2.7 V supply range.

Unique Advantages

• Mid-density 512 Mbit capacity: Balances memory capacity and board footprint for applications that need more than low-density DRAM but do not require higher-density devices.
• Defined timing characteristics: 133 MHz clock frequency, 750 ps access time, and 15 ns write cycle time provide clear performance parameters for system timing design.
• Compact FBGA package: 60-TFBGA (60-FBGA, 10 × 12.5 mm) package enables higher component density on PCBs.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports integration into lower-voltage system domains.
• Specified operating temperature: 0°C to 70°C ambient range aligns the device with standard commercial-temperature applications.
• Manufactured by Micron: Provides traceability to a recognized memory supplier for procurement and component lifecycle considerations.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16BN-75 L:C (IC DRAM 512MBIT PARALLEL 60FBGA) positions itself as a compact, mid-density DDR SDRAM option with clearly specified timing, voltage, and thermal parameters. Its 32M × 16 organization, 133 MHz clock, and 60-FBGA package make it appropriate for designs that require a balance of capacity, timing predictability, and small board footprint.

This device is suited to engineering teams and procurement looking for a Micron-manufactured parallel DRAM component with defined electrical and mechanical specifications, enabling straightforward integration into systems operating within the provided voltage and temperature ranges.

Request a quote or submit a pricing inquiry for MT46V32M16BN-75 L:C to receive availability and ordering information for this 512 Mbit parallel DDR SDRAM device.