MT46V32M16BN-6:C TR

The MT46V32M16BN-6:C TR is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization. It provides parallel SDRAM storage in a compact 60-ball FBGA package and is specified for operation within a 0°C to 70°C ambient range.

Designed for system designs requiring parallel DDR memory at a 512 Mbit density, the device combines a 167 MHz clock specification, 700 ps access time and a 2.3 V–2.7 V supply window to support designs that require specified timing, voltage and small-package integration.

Key Features

• Memory Core  DDR SDRAM architecture providing volatile storage with a MemorySize of 512 Mbit and MemoryOrganization of 32M × 16.
• Interface & Speed  Parallel memory interface with a Clock Frequency of 167 MHz suited to designs using parallel SDRAM connectivity.
• Timing  Access time of 700 ps and a Write Cycle Time (word/page) of 15 ns, enabling deterministic timing characteristics for system memory operations.
• Voltage  Specified Voltage Supply range of 2.3 V to 2.7 V to match systems designed around this supply domain.
• Package & Mounting  Supplied in a 60-TFBGA package; Supplier device package listed as 60-FBGA (10×12.5), suitable for compact PCB footprint requirements.
• Operating Conditions  Ambient operating temperature range of 0°C to 70°C (TA) for standard commercial environments.

Typical Applications

• Parallel SDRAM memory for embedded systems  Use as volatile DDR storage where a 512 Mbit, 32M × 16 parallel memory is required.
• Buffer and working memory  Employed in designs that require defined access times (700 ps) and write cycle timing (15 ns) for transient data storage.
• Space-constrained designs  Integration where a 60-ball FBGA package footprint (60-FBGA (10×12.5)) is needed for compact PCB layouts.

Unique Advantages

• Defined DDR SDRAM configuration: 32M × 16 organization and DDR architecture provide a clear memory mapping and interface model for parallel systems.
• Specified timing parameters: 700 ps access time and 15 ns write cycle time give designers precise timing targets for system integration and verification.
• Clocked operation at 167 MHz: The 167 MHz clock frequency provides a concrete performance point for system timing and throughput planning.
• Tight supply range: 2.3 V–2.7 V supply requirement supports designs targeting that specific voltage domain and simplifies power budgeting.
• Compact FBGA packaging: 60-TFBGA / 60-FBGA (10×12.5) packaging enables reduced PCB area for space-sensitive applications.
• Commercial temperature rating: 0°C to 70°C operating range aligns the part with standard commercial-environment deployments.

Why Choose MT46V32M16BN-6:C TR?

The MT46V32M16BN-6:C TR positions itself as a focused 512 Mbit parallel DDR SDRAM solution that provides explicit, verifiable electrical and timing specifications for system designers. Its 32M × 16 organization, 167 MHz clocking and documented access and write-cycle timings support predictable integration into parallel-memory architectures.

This device is suited to designers and procurement teams needing a defined-density, small-package DRAM component with a 2.3 V–2.7 V supply window and commercial temperature operation. The clear specification set supports long-term design planning, timing validation and compact board-level implementation.

If you require pricing, lead-time or availability information for the MT46V32M16BN-6:C TR, request a quote or contact sales to submit your requirements and receive assistance.