MT46V32M16BN-6 IT:F TR

IC DRAM 512MBIT PAR 60FBGA
Part Description

IC DRAM 512MBIT PAR 60FBGA

Quantity 252 Available (as of May 26, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeIndustrial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16BN-6 IT:F TR – IC DRAM 512MBIT PAR 60FBGA

The MT46V32M16BN-6 IT:F TR is a 512 Mbit DDR SDRAM device configured as 32M × 16, designed for high-speed, volatile parallel memory applications. It implements a double-data-rate architecture with source-synchronous data capture and internal DLL circuitry to support two data transfers per clock cycle.

Targeted at applications requiring compact, industrial-temperature memory, this 60-ball FBGA component delivers parallel DDR interfacing, programmable burst lengths and internal bank architecture for concurrent operations and flexible system buffering.

Key Features

  • Memory core — 512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks for concurrent operation.
  • DDR architecture — Internal pipelined DDR design provides two data accesses per clock cycle with differential clock inputs (CK/CK#) and commands registered on positive CK edges.
  • Data strobe and masking — Bidirectional DQS transmitted/received with data; x16 device includes two DQS lines (one per byte) and two data mask (DM) signals.
  • Timing and performance — Specified clock frequency up to 167 MHz (CL = 2.5) with access time 700 ps and write cycle time (word/page) of 15 ns.
  • Voltage — VDD/VDDQ operating range typically +2.5 V (specified supply range 2.3 V to 2.7 V).
  • Refresh and power management — Auto-refresh support with 8K refresh cycles (64 ms for commercial/industrial); self-refresh supported (not available on AT devices per datasheet).
  • Programmable burst lengths — Supports burst lengths of 2, 4, or 8 for flexible data transfer patterns.
  • Signal alignment — DLL aligns DQ and DQS transitions with CK; DQS is edge-aligned for READs and center-aligned for WRITEs.
  • Package — 60-ball thin FBGA (10 mm × 12.5 mm) in a compact footprint for space-constrained designs.
  • Operating temperature — Industrial temperature range of −40°C to +85°C (TA).

Typical Applications

  • Embedded systems — Provides temporary high-speed parallel memory for buffering and working memory in industrial embedded controllers operating across −40°C to +85°C.
  • Networking and communications — Serves as low-latency frame or packet buffer where parallel DDR bandwidth and programmable burst lengths improve throughput.
  • Video and graphics buffers — x16 data width and DDR transfers support frame buffering and intermediate storage in video-processing subsystems.
  • Consumer and industrial electronics — Compact 60-ball FBGA package enables integration into space-constrained devices needing 512 Mbit volatile storage.

Unique Advantages

  • Parallel DDR interface: Two data transfers per clock cycle and differential clock inputs provide predictable timing for high-bandwidth temporary storage.
  • Byte-level data strobes and masking: Dual DQS and DM on the x16 device enable per-byte capture and write masking for flexible data handling.
  • Industrial temperature rating: Specified −40°C to +85°C supports deployment in industrial environments without additional derating statements.
  • Compact FBGA package: 60-ball (10 mm × 12.5 mm) FBGA saves board area while delivering required I/O density for parallel DDR interfaces.
  • Flexible timing options: Programmable burst lengths and internal DLL support alignment of data and strobe signals for reliable high-speed transfers.
  • Power rail compatibility: Operates within a 2.3 V to 2.7 V supply range (VDD/VDDQ), matching common 2.5 V DDR I/O domains.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16BN-6 IT:F TR is positioned for designs that require compact, parallel DDR memory with industrial temperature capability and predictable timing. Its 32M × 16 organization, dual DQS per byte, and internal DLL make it suitable for systems needing reliable, high-speed volatile storage and flexible burst transfers.

This Micron-manufactured DDR device is appropriate for engineers building embedded, industrial, networking or video-buffering systems that require a 512 Mbit parallel DRAM in a small FBGA footprint, operating across a wide temperature range and standard 2.5 V I/O domain.

If you need pricing, availability, or a formal quote for the MT46V32M16BN-6 IT:F TR, request a quote or submit an RFQ to receive detailed commercial information and lead-time estimates.

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