MT46V32M16BN-6 IT:F TR
| Part Description |
IC DRAM 512MBIT PAR 60FBGA |
|---|---|
| Quantity | 252 Available (as of May 26, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16BN-6 IT:F TR – IC DRAM 512MBIT PAR 60FBGA
The MT46V32M16BN-6 IT:F TR is a 512 Mbit DDR SDRAM device configured as 32M × 16, designed for high-speed, volatile parallel memory applications. It implements a double-data-rate architecture with source-synchronous data capture and internal DLL circuitry to support two data transfers per clock cycle.
Targeted at applications requiring compact, industrial-temperature memory, this 60-ball FBGA component delivers parallel DDR interfacing, programmable burst lengths and internal bank architecture for concurrent operations and flexible system buffering.
Key Features
- Memory core — 512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks for concurrent operation.
- DDR architecture — Internal pipelined DDR design provides two data accesses per clock cycle with differential clock inputs (CK/CK#) and commands registered on positive CK edges.
- Data strobe and masking — Bidirectional DQS transmitted/received with data; x16 device includes two DQS lines (one per byte) and two data mask (DM) signals.
- Timing and performance — Specified clock frequency up to 167 MHz (CL = 2.5) with access time 700 ps and write cycle time (word/page) of 15 ns.
- Voltage — VDD/VDDQ operating range typically +2.5 V (specified supply range 2.3 V to 2.7 V).
- Refresh and power management — Auto-refresh support with 8K refresh cycles (64 ms for commercial/industrial); self-refresh supported (not available on AT devices per datasheet).
- Programmable burst lengths — Supports burst lengths of 2, 4, or 8 for flexible data transfer patterns.
- Signal alignment — DLL aligns DQ and DQS transitions with CK; DQS is edge-aligned for READs and center-aligned for WRITEs.
- Package — 60-ball thin FBGA (10 mm × 12.5 mm) in a compact footprint for space-constrained designs.
- Operating temperature — Industrial temperature range of −40°C to +85°C (TA).
Typical Applications
- Embedded systems — Provides temporary high-speed parallel memory for buffering and working memory in industrial embedded controllers operating across −40°C to +85°C.
- Networking and communications — Serves as low-latency frame or packet buffer where parallel DDR bandwidth and programmable burst lengths improve throughput.
- Video and graphics buffers — x16 data width and DDR transfers support frame buffering and intermediate storage in video-processing subsystems.
- Consumer and industrial electronics — Compact 60-ball FBGA package enables integration into space-constrained devices needing 512 Mbit volatile storage.
Unique Advantages
- Parallel DDR interface: Two data transfers per clock cycle and differential clock inputs provide predictable timing for high-bandwidth temporary storage.
- Byte-level data strobes and masking: Dual DQS and DM on the x16 device enable per-byte capture and write masking for flexible data handling.
- Industrial temperature rating: Specified −40°C to +85°C supports deployment in industrial environments without additional derating statements.
- Compact FBGA package: 60-ball (10 mm × 12.5 mm) FBGA saves board area while delivering required I/O density for parallel DDR interfaces.
- Flexible timing options: Programmable burst lengths and internal DLL support alignment of data and strobe signals for reliable high-speed transfers.
- Power rail compatibility: Operates within a 2.3 V to 2.7 V supply range (VDD/VDDQ), matching common 2.5 V DDR I/O domains.
Why Choose IC DRAM 512MBIT PAR 60FBGA?
The MT46V32M16BN-6 IT:F TR is positioned for designs that require compact, parallel DDR memory with industrial temperature capability and predictable timing. Its 32M × 16 organization, dual DQS per byte, and internal DLL make it suitable for systems needing reliable, high-speed volatile storage and flexible burst transfers.
This Micron-manufactured DDR device is appropriate for engineers building embedded, industrial, networking or video-buffering systems that require a 512 Mbit parallel DRAM in a small FBGA footprint, operating across a wide temperature range and standard 2.5 V I/O domain.
If you need pricing, availability, or a formal quote for the MT46V32M16BN-6 IT:F TR, request a quote or submit an RFQ to receive detailed commercial information and lead-time estimates.