MT46V32M16BN-5B:F

The MT46V32M16BN-5B:F is a 512 Mbit parallel DDR SDRAM organized as 32M × 16, delivered in a 60‑ball FBGA (10 × 12.5 mm) package. It implements a double‑data‑rate architecture with internal DLL and source‑synchronous data capture to provide two data accesses per clock cycle.

This device is intended for systems that require a 512 Mbit parallel DDR memory solution operating at up to a 200 MHz clock rate, with a commercial temperature rating and a 2.5 V–2.7 V supply range.

Key Features

• Core Architecture  Internal, pipelined DDR architecture with a DLL and bidirectional data strobe (DQS) enabling two data transfers per clock cycle.
• Memory Organization  512 Mbit capacity organized as 32M × 16 with four internal banks for concurrent operation.
• Performance & Timing  Rated for a clock frequency up to 200 MHz (speed grade -5B) with access timing specifications including a 700 ps access time and programmable burst lengths of 2, 4, or 8.
• Interface  Parallel DDR interface with differential clock inputs (CK, CK#) and DQS transmitted/received with data; x16 devices include two DQS/DM signals (one per byte).
• Power Supply  Operates from a 2.5 V to 2.7 V supply range compatible with 2.5 V I/O signaling.
• Package & Mounting  60‑TFBGA (60‑ball FBGA, 10 × 12.5 mm) package optimized for surface mounting.
• Operating Range  Commercial temperature rating: 0 °C to 70 °C.

Typical Applications

• Memory subsystems  Use as off‑chip parallel DDR memory for systems requiring a 512 Mbit DDR SDRAM with source‑synchronous DQS support.
• Embedded platforms  Integration into embedded designs needing a compact 60‑ball FBGA DDR device within a 2.5 V supply domain.
• Consumer and industrial equipment (commercial temp)  Suitable for equipment that operates within the 0 °C to 70 °C temperature range and requires DDR performance at up to 200 MHz.

Unique Advantages

• Parallel DDR data throughput: Two data transfers per clock cycle and source‑synchronous DQS enable higher effective data rates relative to single‑data‑rate DRAM.
• Flexible burst and bank management: Programmable burst lengths (2, 4, 8) and four internal banks allow more efficient read/write sequencing for burst‑oriented workloads.
• System timing alignment: DLL and DQS/DQ alignment features simplify timing closure for CK‑aligned transfers.
• Compact FBGA package: 60‑ball FBGA (10 × 12.5 mm) minimizes PCB area while providing a standard surface‑mount package footprint.
• Commercial operating specification: Specified 0 °C to 70 °C temperature range and 2.5 V–2.7 V supply range for designs targeting commercial environments.

Why Choose MT46V32M16BN-5B:F?

The MT46V32M16BN-5B:F positions itself as a straightforward 512 Mbit DDR SDRAM option for designs that require a parallel DDR interface, source‑synchronous DQS, and a compact 60‑ball FBGA package. Its DDR architecture, programmable burst lengths, and four internal banks help support bursty memory access patterns and improve throughput in systems operating on a 2.5 V supply domain.

This device suits engineers and procurement teams specifying commercial‑temperature DDR memory in embedded and system‑level applications where verified timing features (DLL, DQS) and a known package footprint are required for consistent integration and long‑term availability.

If you need pricing, availability, or a formal quote for MT46V32M16BN-5B:F, request a quote or submit an inquiry to receive sales and ordering information.