MT46V32M16BN-6:C

The MT46V32M16BN-6:C is a 512 Mbit volatile DDR SDRAM organized as 32M × 16 with a parallel memory interface. It is provided in a 60-FBGA (10 × 12.5 mm) package and is specified for operation from 0°C to 70°C.

Key electrical and timing characteristics include a clock frequency of 167 MHz, an access time of 700 ps, a write cycle time (word/page) of 15 ns, and a supply voltage range of 2.3 V to 2.7 V—making it suitable where a compact, parallel DDR DRAM device is required.

Key Features

• Memory Architecture 512 Mbit density organized as 32M × 16, providing parallel DRAM storage in a single device.
• DDR SDRAM Technology SDRAM - DDR technology with a parallel memory interface for synchronous data transfers.
• Performance Clock frequency rated at 167 MHz and an access time of 700 ps; write cycle time (word/page) specified at 15 ns.
• Power Operates from a supply voltage range of 2.3 V to 2.7 V, matching standard DDR supply requirements within that range.
• Package and Mounting Supplied in a 60-TFBGA / 60-FBGA (10 × 12.5 mm) package for compact board-level integration and surface-mount assembly.
• Operating Conditions Specified operating ambient temperature range of 0°C to 70°C (TA).

Unique Advantages

• 512 Mbit density: Delivers moderate on-board DRAM capacity in a single parallel device, simplifying memory BOM.
• Parallel DDR interface: Synchronous DDR SDRAM architecture enables predictable timing behavior for systems designed around parallel memory buses.
• Compact FBGA package: 60-FBGA (10 × 12.5 mm) package provides a small footprint for space-constrained PCB designs.
• Defined timing and throughput: 167 MHz clock and 700 ps access time with 15 ns write cycle time give clear performance parameters for system timing analysis.
• Standard supply range: 2.3 V to 2.7 V operation aligns with common DDR power domains within that specified range.
• Commercial temperature rating: 0°C to 70°C ambient temperature specification supports typical commercial-environment deployments.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16BN-6:C positions itself as a straightforward, specification-driven DDR SDRAM option for designs that require a 512 Mbit parallel memory device in a compact FBGA package. Its documented clock rate, access time, write cycle timing, and supply range provide the concrete parameters engineers need for memory subsystem design and timing verification.

This device is suitable for projects and customers looking for a defined-capability DDR DRAM component—particularly where a 32M × 16 organization, 60-FBGA footprint, and commercial temperature operation are required. The clear electrical and mechanical specifications support predictable integration and long-term component selection.

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