MT46V32M16BN-75 IT:C TR
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,634 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16BN-75 IT:C TR – IC DRAM 512MBIT PARALLEL 60FBGA
The MT46V32M16BN-75 IT:C TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It provides synchronous DDR operation at a 133 MHz clock frequency and is packaged in a 60‑TFBGA (10 × 12.5) footprint.
This device targets applications requiring mid-density volatile DRAM with defined timing characteristics—offering deterministic access time and a compact package suitable for constrained board space. Key technical attributes include a 750 ps access time, 15 ns write cycle time (word/page), and an operating temperature range of −40 °C to 85 °C.
Key Features
- Memory Architecture 512 Mbit DDR SDRAM organized as 32M × 16 for parallel data paths and predictable addressing.
- Performance Synchronous DDR operation at a 133 MHz clock frequency with a 750 ps access time and 15 ns write cycle time (word/page).
- Power Supported supply voltage range of 2.3 V to 2.7 V for low‑voltage DDR system compatibility.
- Package 60‑TFBGA (60‑FBGA, 10 × 12.5 mm) compact ball grid array for space‑efficient board integration.
- Environmental Range Specified operation from −40 °C to 85 °C (TA), suitable for extended temperature applications within that range.
- Interface Parallel memory interface optimized for synchronous DDR system designs.
Unique Advantages
- Mid‑density capacity: 512 Mbit (32M × 16) provides a balanced memory size for designs needing moderate storage without higher-density complexity.
- Deterministic timing: 750 ps access time and 15 ns write cycle time give clear, verifiable timing characteristics for system timing budgets.
- Low‑voltage operation: 2.3 V to 2.7 V supply range supports lower-voltage DDR boards and can simplify power-rail design.
- Compact footprint: 60‑TFBGA (10 × 12.5 mm) package reduces PCB area compared with larger packages while maintaining thermal mass of a BGA.
- Extended ambient range: −40 °C to 85 °C rating accommodates a wide range of temperature environments within specified limits.
- Manufacturer backing: Offered by Micron Technology Inc., providing a known supplier for component sourcing.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT46V32M16BN-75 IT:C TR is positioned for designs that require a compact, mid-density DDR SDRAM with defined timing and voltage characteristics. Its 32M × 16 organization, 133 MHz DDR clock rate, and clear timing metrics make it suitable for systems where predictable memory performance and a small BGA footprint are priorities.
This device is appropriate for engineers and procurement teams seeking a Micron‑manufactured 512 Mbit parallel DDR DRAM with defined operating temperature and voltage ranges, enabling consistent integration into projects that match the specified electrical and thermal envelopes.
Request a quote or contact sales to submit a pricing and availability inquiry for the MT46V32M16BN-75 IT:C TR.
