MT46V32M16BN-5B:C
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,874 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16BN-5B:C – IC DRAM 512MBIT PARALLEL 60FBGA
The MT46V32M16BN-5B:C is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It is supplied in a compact 60‑FBGA package and operates from 2.5 V to 2.7 V.
This device targets designs that require volatile DDR memory with a 200 MHz clock capability, 700 ps access time and a 15 ns write cycle time for word/page operations, delivered in a space-efficient FBGA footprint and a commercial temperature range of 0 °C to 70 °C.
Key Features
- Memory Core 512 Mbit DDR SDRAM organized as 32M × 16 to provide parallel, volatile storage.
- Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word/page) for predictable memory timing.
- Power Operates from a 2.5 V to 2.7 V supply range.
- Package Supplied in a 60‑TFBGA / 60‑FBGA (10 × 12.5 mm) package for compact board-level integration.
- Operating Range Designed for commercial operating temperatures from 0 °C to 70 °C (TA).
- Interface Parallel memory interface suitable for integration into parallel DDR memory subsystems.
Typical Applications
- System Memory — Provides 512 Mbit of parallel DDR SDRAM for systems that require volatile main or auxiliary memory.
- Embedded Platforms — Compact 60‑FBGA package for space-constrained embedded boards and modules.
- High‑speed Buffering — 200 MHz clock rate and 700 ps access time support parallel buffering and temporary data storage.
Unique Advantages
- Compact FBGA Packaging: 60‑FBGA (10 × 12.5 mm) package reduces PCB area for dense board layouts.
- Deterministic Timing: 700 ps access time and 15 ns write cycle time provide consistent timing characteristics for system design.
- DDR Performance: DDR SDRAM architecture with a 200 MHz clock enables higher data throughput compared with single-rate SDRAM at equivalent clocking.
- Wide Supply Window: 2.5 V to 2.7 V supply range accommodates standard DDR power domains.
- Commercial Temperature Range: Rated for 0 °C to 70 °C operation for typical commercial applications.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT46V32M16BN-5B:C combines a 32M × 16 DDR SDRAM organization with measured timing parameters—200 MHz clock, 700 ps access time and 15 ns write cycle time—delivered in a small 60‑FBGA package. This balance of density, timing predictability and compact packaging supports designs that need reliable parallel volatile memory in constrained board spaces.
It is well suited to engineers and procurement teams specifying commercial‑temperature DDR memory for embedded systems, buffering applications, and memory subsystems where clear electrical and timing specifications, a defined supply range, and a compact footprint are primary considerations.
Request a quote or submit a pricing and availability inquiry to receive procurement information for the MT46V32M16BN-5B:C.
