MT46V16M8TG-75:D

The MT46V16M8TG-75:D is a 128 Mbit double-data-rate (DDR) SDRAM organized as 16M x 8 with a parallel memory interface in a 66-pin TSSOP package. It implements an internal pipelined DDR architecture with source-synchronous data strobe and supports features such as programmable burst lengths, auto/self refresh and a DLL for timing alignment.

This commercial-temperature (0°C to 70°C) device targets systems that require compact, board-level DDR memory with a 133 MHz clock capability and low-voltage operation (2.3 V–2.7 V).

Key Features

• Core Architecture Internal, pipelined double-data-rate (DDR) operation provides two data accesses per clock cycle and uses a bidirectional data strobe (DQS) for source-synchronous capture.
• Memory Organization 128 Mbit capacity organized as 16M × 8 with four internal banks for concurrent operation and a data mask (DM) for masked writes.
• Performance Clock frequency rated at 133 MHz with an access time of 750 ps and a write cycle time (word page) of 15 ns.
• Timing and Programmability Programmable burst lengths (2, 4, 8), DLL to align DQ/DQS with CK, and support for concurrent auto precharge and auto/self refresh modes.
• Interfaces and I/O Differential clock inputs (CK/CK#) and 2.5 V I/O signaling compatible with SSTL_2 timing (VDD/I/O supply in the 2.3 V–2.7 V range documented).
• Package 66-pin TSSOP (0.400" / 10.16 mm width) plastic package designed for improved lead reliability (OCPL option referenced in documentation).
• Operating Conditions Commercial temperature rating of 0°C to 70°C and VDD/VDDQ supply range of 2.3 V to 2.7 V as specified.

Typical Applications

• Board-level DDR Memory Expansion Use as discrete 128 Mbit DDR SDRAM die replacement where a parallel DDR interface and compact TSOP package are required.
• Embedded Systems Provides short-term volatile storage for commercial-temperature embedded designs that use 16M × 8 memory organization and 2.5 V I/O.
• Consumer and Industrial Electronics (Commercial Grade) Suitable for commercial-grade electronics requiring DDR memory with programmable burst lengths and auto/self refresh capabilities.

Unique Advantages

• Double-Data-Rate Throughput: Two data transfers per clock cycle via DDR architecture and source-synchronous DQS for efficient data capture.
• Compact TSOP Footprint: 66-pin TSSOP package (10.16 mm width) enables high-density board placement while retaining discrete DRAM accessibility.
• Flexible Timing Options: Programmable burst lengths, DLL alignment, and support for concurrent auto precharge provide flexible timing control for system designers.
• Low-Voltage Supply Range: Operates from 2.3 V to 2.7 V, with documented 2.5 V I/O signaling compatibility, matching common DDR I/O requirements.
• Commercial Temperature Rating: Rated for 0°C to 70°C to match a broad set of commercial electronic applications.

Why Choose IC DRAM 128MBIT PAR 66TSOP?

The MT46V16M8TG-75:D delivers a compact, board-mount DDR SDRAM solution that combines 128 Mbit density with DDR architecture features such as source-synchronous DQS, DLL timing alignment, and programmable burst lengths. Its 66-pin TSSOP package and 2.3 V–2.7 V supply range make it suitable for commercial-temperature designs that need discrete parallel DDR memory with predictable timing behavior.

This device is well suited for engineers and procurement teams specifying discrete DDR memory for embedded and board-level applications where documented timing parameters, commercial temperature operation, and a small-outline package are required.

If you need pricing, lead‑time details or to request a quote for the MT46V16M8TG-75:D, please submit a request or contact sales for further assistance.