MT46V16M8P-75:D

The MT46V16M8P-75:D is a 128 Mbit DDR SDRAM device organized as 16M × 8 with a parallel memory interface in a 66‑pin TSSOP package. It implements a double-data-rate architecture with internal pipelined operation and source‑synchronous data strobe for high-throughput synchronous memory access.

This part is intended for designs requiring a compact 128 Mbit parallel DDR memory solution with a commercial temperature rating, a 2.3–2.7 V supply window, and a 66‑TSSOP footprint for board-level integration.

Key Features

• Core/Architecture Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture enabling two data accesses per clock cycle.
• Memory Organization 128 Mbit capacity, organized as 16M × 8 with four internal banks for concurrent operation.
• Performance & Timing Rated clock frequency 133 MHz (–75 speed grade) with an access time of 750 ps and a word/page write cycle time of 15 ns.
• Data Interface Bidirectional data strobe (DQS) transmitted/received with data (source‑synchronous capture); differential clock inputs (CK/CK#); programmable burst lengths of 2, 4, or 8.
• Power Supply range 2.3 V to 2.7 V; 2.5 V I/O (SSTL_2 compatible) as specified in the device documentation.
• Reliability & Refresh Supports auto refresh and self refresh modes and a data mask (DM) for write masking.
• Package 66‑TSSOP (0.400", 10.16 mm width) OCPL long‑lead TSOP option for board mounting and reliability.
• Temperature Range Commercial operating range: 0°C to 70°C (TA).

Typical Applications

• System Memory Expansion Compact 128 Mbit DDR module for systems requiring parallel DDR SDRAM in a 66‑TSSOP footprint.
• Embedded Memory Subsystems Local DDR storage for embedded controllers or processors that interface via parallel DDR memory.
• Legacy or Board‑Level Upgrades Replacement or upgrade memory for designs using 66‑pin TSOP DDR devices with a 2.3–2.7 V supply range.

Unique Advantages

• DDR architecture for doubled throughput: Two data accesses per clock cycle improve effective data rate at the rated clock frequency.
• Source‑synchronous DQS signaling: DQS transmitted/received with data and DLL alignment simplifies timing capture for reads and writes.
• Flexible burst modes: Programmable burst lengths (2, 4, 8) allow tuning of transfer size to match system requirements.
• Compact, industry standard package: 66‑TSSOP package provides a small footprint with longer leads for improved mount reliability.
• Commercial temperature and standard supply: 0°C–70°C rating and 2.3–2.7 V supply window align with common commercial system requirements.

Why Choose MT46V16M8P-75:D?

The MT46V16M8P-75:D offers a straightforward, verifiable DDR SDRAM solution for designs needing 128 Mbit of parallel DDR memory in a 66‑TSSOP package. Its DDR internal architecture, source‑synchronous DQS, and programmable burst lengths provide predictable timing behavior at the specified 133 MHz clock rate and –75 speed grade.

This device is suitable for engineers and procurement teams seeking a commercially rated, board‑mountable DDR memory component with documented electrical and timing parameters, enabling integration into systems that require compact parallel DDR memory modules and standard 2.5 V I/O signaling.

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