MT46V16M8TG-6T L:D TR

The MT46V16M8TG-6T L:D TR is a 128 Mbit DDR SDRAM organized as 16M × 8 with a parallel memory interface in a 66-TSSOP package. It implements Micron's internal, pipelined double-data-rate architecture with source-synchronous data capture and a DLL to align DQ/DQS with the clock.

Designed for commercial-temperature systems (0°C to 70°C), the device provides up to 167 MHz clock operation (speed grade -6T) and supports PC2700/PC2100/PC1600 speed grades according to its timing options, offering a compact memory solution where 2.5V I/O signaling and programmable burst operation are required.

Key Features

• Core Architecture  Double Data Rate (DDR) SDRAM with an internal DLL and four internal banks for concurrent operation and two data accesses per clock cycle.
• Memory Organization  128 Mbit capacity organized as 16M × 8 (4 Meg × 8 × 4 banks), providing a standard DRAM format for parallel interfaces.
• Performance & Timing  Rated for 167 MHz clock frequency at speed grade -6T, with an access time of 700 ps and a write cycle time (word page) of 15 ns; supports programmable burst lengths (2, 4, or 8).
• Interface & Signaling  Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; differential clock inputs (CK/CK#); DQS edge-aligned for READ and center-aligned for WRITE operations.
• Power  Core and I/O supply range VDD = 2.3 V to 2.7 V; 2.5 V I/O is SSTL_2 compatible per datasheet specifications.
• Package & Mounting  66-TSSOP (0.400", 10.16 mm width) plastic TSOP package with longer lead option (OCPL) for improved reliability; surface-mount mounting type.
• Operating Range  Commercial temperature rating: 0°C to 70°C, suitable for standard commercial applications.
• System Features  Supports auto refresh, self refresh, concurrent auto precharge option, data mask (DM) for write masking, and multiple timing option sets documented in the datasheet.

Unique Advantages

• Double-data-rate throughput: Enables two data transfers per clock cycle through DDR architecture, increasing effective bandwidth within the rated clock frequency.
• Source-synchronous data capture: DQS transmitted with data and DLL alignment improve timing margin for read and write operations.
• SSTL_2-compatible I/O: 2.5 V I/O signaling supports commonly used memory interface standards for system-level integration.
• Flexible burst and refresh options: Programmable burst lengths and support for auto/self refresh modes allow designers to optimize memory transactions and power states.
• Compact, reliable package: 66-TSSOP with longer lead OCPL option provides a space-efficient surface-mount form factor while addressing lead reliability.
• Speed-grade alignment: The -6T timing option provides compatibility with PC2700/PC2100/PC1600 speed classes as detailed in the datasheet.

Why Choose MT46V16M8TG-6T L:D TR?

The MT46V16M8TG-6T L:D TR offers a clear specification set for designers needing a 128 Mbit DDR SDRAM in a compact 66-TSSOP package with commercial temperature rating. Its DDR architecture, DLL-based timing, DQS source-synchronous signaling, and SSTL_2-compatible I/O provide predictable timing behavior and integration for systems targeted at PC2700/PC2100/PC1600 speed classes and similar applications.

Choose this device when you require a standardized 16M × 8 DDR memory with programmable burst operation, supported refresh modes, and a surface-mount TSOP package that balances density and reliability for commercial-temperature designs.

For pricing, availability, or to request a formal quote for MT46V16M8TG-6T L:D TR, submit an inquiry or request a quote through your preferred procurement channel referencing the full part number.