MT46V16M8TG-6T IT:D TR

The MT46V16M8TG-6T IT:D TR is a 128 Mbit DDR SDRAM device from Micron Technology, Inc., implemented as a 16M × 8 organization with four internal banks. It implements a pipelined double-data-rate architecture with a parallel memory interface and is provided in a 66‑pin TSSOP (66‑TSOP / 0.400", 10.16 mm width) package.

This device targets designs that require board‑level DDR memory in a compact TSOP footprint, offering a 2.5 V I/O operating window and industrial temperature support for use across -40°C to +85°C (TA). Its feature set includes on‑chip DLL, DQS strobe support and programmable burst lengths for timing flexibility.

Key Features

• Core DDR Architecture Internal, pipelined double‑data‑rate (DDR) design providing two data accesses per clock cycle; differential clock inputs (CK/CK#) and on‑chip DLL for timing alignment.
• Memory Density & Organization 128 Mbit capacity organized as 16M × 8 with four internal banks (4‑bank architecture) to support concurrent operations.
• Interface & Timing Parallel DDR interface with bidirectional data strobe (DQS), programmable burst lengths (2, 4, 8), and documented timing grades (–6T supports 167 MHz nominal clock frequency). Specified access time: 700 ps and write cycle time (word page) of 15 ns.
• Power & I/O Nominal 2.5 V I/O (SSTL_2 compatible) with supply operating range of 2.3 V to 2.7 V (VDD/VDDQ variants noted in datasheet options).
• Refresh & Low‑Power Options Supports auto refresh and self refresh modes; low‑power self refresh is available as an option according to the datasheet.
• Package 66‑pin TSSOP (0.400", 10.16 mm width) with longer lead TSOP option (OCPL) for improved reliability in board assemblies.
• Operating Temperature Industrial temperature rating: -40°C to +85°C (TA), suitable for temperature‑sensitive deployments.

Typical Applications

• Industrial Systems Use in systems requiring DDR memory across an industrial temperature range (-40°C to +85°C).
• Embedded Memory Subsystems Board‑level 128 Mbit DDR storage for embedded compute and buffer applications that need a 66‑pin TSOP footprint and parallel DDR interface.
• Board Upgrades and Replacements Suitable for designs that require a drop‑in DDR SDRAM device in a 66‑TSOP package with defined speed grades and timing options.

Unique Advantages

• Double‑Data‑Rate Throughput: Two data transfers per clock cycle increase effective bandwidth without changing clock frequency.
• Speed Grade Flexibility: –6T speed grade supports a 167 MHz clock (CL = 2.5) with documented timing windows, enabling matched timing selection for design requirements.
• Signal Integrity Features: Bidirectional DQS and on‑chip DLL align data and strobe transitions for reliable source‑synchronous capture.
• Compact TSOP Footprint: 66‑TSSOP (0.400", 10.16 mm) package offers a small board area for higher PCB density while retaining through‑life reliability options (OCPL).
• Industrial Temperature Support: Rated for -40°C to +85°C (TA) to meet harsher environmental requirements.
• SSTL_2‑Compatible I/O: 2.5 V I/O operation aligns with industry SSTL_2 signaling levels noted in the datasheet.

Why Choose MT46V16M8TG-6T IT:D TR?

The MT46V16M8TG-6T IT:D TR is positioned as a compact, mid‑density DDR SDRAM device for designs that require a parallel DDR interface in a 66‑pin TSOP package. With a 128 Mbit capacity, four internal banks, on‑chip DLL and DQS support, and selectable speed grades, it provides timing flexibility and predictable behavior at a nominal 2.5 V I/O operating point.

Offered by Micron Technology, Inc., this device is suited to engineers designing board‑level memory solutions that need industrial temperature operation, configurable refresh modes, and timing grades up to 167 MHz. Its combination of documented timing, package options, and DDR features supports reliable integration into systems requiring parallel DRAM resources.

Request a quote or submit an RFQ to inquire about pricing and availability for the MT46V16M8TG-6T IT:D TR.