MT46V16M16TG-75 IT:F TR

The MT46V16M16TG-75 IT:F TR is a 256 Mbit volatile DDR SDRAM device from Micron Technology Inc., organized as 16M × 16 with a parallel interface. It implements double-data-rate architecture with internal DLL and DQS support to enable source-synchronous data capture and two data transfers per clock cycle.

This device is provided in a 66‑TSSOP (0.400", 10.16 mm width) package and is specified for industrial temperature operation (−40°C to +85°C). Key electrical and timing characteristics include a 133 MHz clock rate, 2.3 V–2.7 V supply range, 750 ps access time, and a 15 ns write cycle time (word/page).

Key Features

• Core / Architecture Internal pipelined double-data-rate (DDR) architecture delivering two data accesses per clock cycle; DLL aligns DQ and DQS transitions with CK.
• Memory Organization 256 Mbit total capacity organized as 16M × 16 with four internal banks for concurrent operation.
• Data strobes and masking Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices include two DQS signals and two data mask (DM) signals (one per byte).
• Clock and command interface Differential clock inputs (CK and CK#) with commands entered on each positive CK edge; DQS edge-aligned for READs and center-aligned for WRITEs.
• Timing Specified clock rate of 133 MHz and 750 ps access time; programmable burst lengths of 2, 4, or 8 and a 15 ns write cycle time (word/page).
• Power / I/O Supply voltage range 2.3 V–2.7 V; 2.5 V I/O compatible with SSTL_2 signalling (as documented in the datasheet).
• Refresh and power management Auto refresh with 8K refresh cycles and self-refresh capability (self-refresh not available on AT devices, per datasheet options).
• Package and temperature 66‑pin TSSOP (0.400", 10.16 mm width) package; specified operating ambient range −40°C to +85°C (IT industrial rating).

Unique Advantages

• Industrial temperature range: Operates from −40°C to +85°C, supporting designs that require extended ambient temperature tolerance.
• Source-synchronous DDR timing: DQS and DLL support enable precise alignment of data and strobes for reliable high-speed parallel transfers at the specified clock rate.
• Parallel x16 organization: 16M × 16 configuration with two DQS/DM channels simplifies interfacing to 16‑bit parallel memory buses.
• Compact TSSOP package: 66‑pin TSSOP (0.400" / 10.16 mm width) provides a low-profile package option for board-level integration where footprint and lead form matter.
• Flexible timing and bursting: Programmable burst lengths (2, 4, 8) and supported timing parameters allow tuning for different system read/write patterns.
• Robust refresh control: Auto refresh with 8K-cycle refresh implementation and self-refresh support (per device option) for retention during low-power intervals.

Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?

The MT46V16M16TG-75 IT:F TR is positioned for designs that require a 256 Mbit DDR SDRAM in a 16‑bit parallel configuration with industrial temperature capability. Its DDR architecture, DQS/DLL timing alignment, and programmable burst modes deliver predictable, source-synchronous performance at the specified 133 MHz clock rate.

This Micron device suits systems needing a compact 66‑TSSOP footprint, a 2.3 V–2.7 V supply range, and controlled timing behavior (750 ps access time, 15 ns write cycle). It is appropriate where controlled refresh, multiple internal banks, and byte-level masking are required for memory subsystem design and integration.

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