MT46V32M16CV-5B:J

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 1,591 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16CV-5B:J – IC DRAM 512Mbit Parallel 60FBGA

The MT46V32M16CV-5B:J is a 512 Mbit volatile memory device implemented as DDR SDRAM with a parallel memory interface and a 32M × 16 organization. It provides 512 Mbit of DDR SDRAM in a compact 60-ball FBGA package for designs that require standard DDR memory building blocks.

Key technical characteristics include a 200 MHz clock frequency, 700 ps access time, a 15 ns write cycle time (word page), and a supply voltage range of 2.5 V to 2.7 V. The device is specified for commercial temperature operation from 0°C to 70°C (TA).

Key Features

  • Memory Technology DDR SDRAM architecture providing volatile DRAM storage with a parallel memory interface.
  • Capacity & Organization 512 Mbit total capacity organized as 32M × 16.
  • Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word page) for predictable timing behavior.
  • Power Operates from a 2.5 V to 2.7 V supply range.
  • Package 60-ball TFBGA package; supplier device package listed as 60-FBGA (8×12.5).
  • Operating Temperature Specified for commercial operation from 0°C to 70°C (TA).

Typical Applications

  • Memory subsystems Use as on-board DDR memory where 512 Mbit capacity and a 32M × 16 organization are required.
  • Embedded systems DDR SDRAM for embedded designs that require a parallel memory interface and a compact FBGA package footprint.
  • Standard commercial electronics Suitable for commercial-temperature devices specified to operate between 0°C and 70°C (TA).

Unique Advantages

  • DDR SDRAM Architecture: Provides standard DDR operation and a parallel interface for integration into existing DDR memory subsystems.
  • Matched Timing Characteristics: 200 MHz clock, 700 ps access time and 15 ns write cycle time (word page) enable deterministic timing for system designers.
  • Compact FBGA Package: 60-ball TFBGA (60-FBGA, 8×12.5) reduces board area while delivering 512 Mbit of memory.
  • <strong-Wide Supply Range: 2.5 V to 2.7 V supply accommodates standard DDR voltage domains.
  • Commercial Temperature Rating: Specified operation from 0°C to 70°C (TA) for commercial-grade deployments.

Why Choose MT46V32M16CV-5B:J?

The MT46V32M16CV-5B:J delivers a straightforward DDR SDRAM solution with clear performance and power specifications—200 MHz clocking, 700 ps access time, 15 ns write cycle time, and a 2.5 V–2.7 V supply—packaged in a 60-ball FBGA. It is positioned for applications that require a known DDR memory building block with a 32M × 16 organization and 512 Mbit capacity.

This device is suited to designers and procurement teams specifying commercial-temperature DDR memory for compact PCB layouts and standard DDR power domains, offering predictable timing and industry-standard packaging for integration into existing memory subsystems.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT46V32M16CV-5B:J.

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